HMC-ABH241-DIE

NOT RECOMMENDED FOR NEW DESIGNS

Medium Power Amplifier Chip, 50 - 66 GHz

Data Sheet Product Selection Table
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Overview

  • Output IP3: +25 dBm
  • P1dB: +17 dBm
  • Gain: 24 dB
  • Supply Voltage: +5V
  • 50 Ohm Matched Input/Output
  • Die Size: 3.2 x 1.42 x 0.1 mm

The HMC-ABH241 is a four stage GaAs HEMT MMIC Medium Power Amplifier which operates between 50 and 66 GHz. The HMC-ABH241 provides 24 dB of gain, and an output power of +17 dBm at 1dB compression from a +5V supply voltage. All bond pads and the die backside are Ti/Au metallized and the amplifier device is fully passivated for reliable operation.

The HMC-ABH241 GaAs HEMT MMIC Medium Power Amplifier is compatible with conventional die attach methods, as well as thermocompression and thermosonic wire bonding, making it ideal for MCM and hybrid microcircuit applications. All data shown herein is measured with the chip in a 50 Ohm environment and contacted with RF probes.

Applications

  • Short Haul / High Capacity Links
  • Wireless LAN Bridges
  • Military & Space
HMC-ABH241-DIE
Medium Power Amplifier Chip, 50 - 66 GHz
hmc-abh241_fbl
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Documentation

Data Sheet 1

Application Note 3

Technical Articles 1

Data Sheet

This is the most up-to-date revision of the Data Sheet.

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Software Resources

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Hardware Ecosystem

Parts Product Life Cycle Description
HMC1022A-Die
RECOMMENDED FOR NEW DESIGNS GaAs, pHEMT, MMIC, 0.25 W Power Amplifier, DC to 48 GHz
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Tools & Simulations

ADIsimRF

ADIsimRF is an easy-to-use RF signal chain calculator. Cascaded gain, noise, distortion and power consumption can be calculated, plotted and exported for signal chains with up to 50 stages. ADIsimRF also includes an extensive data base of device models for ADI’s RF and mixed signal components.

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S-Parameter 1

Sys-Parameter Models for Keysight Genesys

Sys-Parameter models contain behavioral parameters, such as P1dB, IP3, gain, noise figure and return loss, which describe nonlinear and linear characteristics of a device.

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