ADPA1113

RECOMMENDED FOR NEW DESIGNS

2 GHz to 6 GHz, 46 dBm (40 W), GaN Power Amplifier

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Overview

  • Internally matched and AC-coupled, 40 W, GaN power amplifier
  • Integrated drain bias inductor
  • POUT: 46.5 dBm typical from 2.0 GHz to 5.7 GHz (PIN = 21 dBm)
  • Small signal gain: 40.5 dB typical from 2.3 GHz to 5.7 GHz
  • Power gain: 25.5 dB typical from 2.0 GHz to 5.7 GHz (PIN = 21 dBm)
  • PAE: 39% typical from 2.3 GHz to 5.7 GHz
  • VDD = 28 V at IDQ = 750 mA
  • 14-lead ceramic leaded chip carrier [LDCC] with a copper-molybdenum base

The ADPA1113 is a gallium nitride (GaN), broadband power amplifier delivering 46.5 dBm (44.7 W) with 39.0% power added efficiency (PAE) from 2.3 GHz to 5.7 GHz. No external matching or AC-coupling are required to achieve full-band operation. Additionally, no external inductor is required to bias the amplifier.

The ADPA1113 is ideal for continuous wave applications, such as military jammers and radars.

APPLICATIONS

  • Military jammers
  • Commercial and military radars
  • Test and measurement equipment

ADPA1113
2 GHz to 6 GHz, 46 dBm (40 W), GaN Power Amplifier
ADPA1113 Functional Block Diagram ADPA1113 Pin Configuration
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Tools & Simulations


Evaluation Kits

eval board
EVAL-ADPA1113

Evaluating the ADPA1113 2 GHz to 6 GHz, 46 dBm (40 W), GaN Power Amplifier

Features and Benefits

  • 2-layer Rogers 4350B evaluation board with heat spreader
  • End launch 2.92 mm RF connectors
  • Through calibration path (depopulated)

Product Details

The ADPA1113-EVALZ is a 2-layer printed circuit board (PCB) fabricated from 10 mil thick Rogers 4350B copper clad mounted to an aluminum heat spreader. The heat spreader provides thermal relief to the ADPA1113 and mechanical support to the PCB. Mounting holes on the heat spreader allow it to be attached to larger heatsinks for improved thermal management. The RFIN and RFOUT ports are populated by 2.92 mm female coaxial connectors, and their respective RF traces are of 50 Ω characteristic impedance. The ADPA1113-EVALZ is populated with components suitable for use over the entire operating temperature range of the ADPA1113.

The RF traces are 50 Ω grounded coplanar waveguides, and the package ground leads connect directly to the ground plane. Multiple vias are used to connect the top and bottom ground planes. The package base, along with an indium foil shim, is mechanically connected to the heat spreader using four, 0-80 × 3/16" stainless steel, socket head screws to ensure adequate electrical and thermal conduction.

The power supply decoupling capacitors shown in Figure 5 represent the configuration that was used to characterize the device. Note that it is possible to reduce the number of capacitors; however, this reduction varies by system. Instead, it is recommended to first remove or combine the largest capacitors that are farthest from the device.

Consult the ADPA1113 data sheet in conjunction with this user guide when working with the ADPA1113-EVALZ evaluation board.

eval board
ADPULSERPLUSEBZ

Pulser Plus Reference Design for GaN PA Biasing and Sequencing

Features and Benefits

  • Complete Bias Control and Sequencing Solution for Pulsed GaN Radar Power Amplifiers
  • Pin Compatible with ADI's existing Pulser Board and with ADI's GaN Power Amplifier Evaluation Boards
  • Operation in Drain Pulsed Mode or Gate Pulsed Mode
  • Optional Crowbar Circuit for Fast Turn Off in Drain Pulsed Mode
  • Single 24 V to 50 V Power Supply with on-board Negative Gate Voltage Generation.
  • Drain Current Monitoring Circuit

Product Details

Pulser Plus is a reference design for biasing Gallium Nitride RF Power Amplifiers. It plugs directly into Analog Devices’ GaN PA evaluation boards such as ADPA1106 and ADPA1107. The only input signals required to control and operate the board are a power supply voltage between 24 V and 50V and a 0V/3V signal on the Drain Pulse Enable or Gate Pulse Enable digital inputs.

Pulser Plus was specifically designed to enable fast pulsing of GaN Radar Power Amplifiers. It can support RF pulses as short as 1us and with rise and fall times of less than 100 ns in both Drain Pulsed mode and Gate Pulsed Mode.

EVAL-ADPA1113
Evaluating the ADPA1113 2 GHz to 6 GHz, 46 dBm (40 W), GaN Power Amplifier
EVAL-ADPA1113 Board Photo Angle View EVAL-ADPA1113 Board Photo Top EVAL-ADPA1113 Board Photo Bottom View
ADPULSERPLUSEBZ
Pulser Plus Reference Design for GaN PA Biasing and Sequencing
ADPULSERPLUSEBZ Angle View ADPULSERPLUSEBZ Bottom View ADPULSERPLUSEBZ Top View ADPULSERPLUSEBZ Pulser Plus Block Diagram ADPULSERPLUSEBZ Drain Pulsed Mode Block Diagam

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