The ADH8412S is a gallium arsenide (GaAs), monolithic microwave
integrated circuit (MMIC), pseudomorphic high electron
mobility transistor (pHEMT), low noise wideband amplifier that
operates from 0.4 GHz to 11 GHz.
The ADH8412S provides a typical gain of 15.5 dB, a 1.4 dB
typical noise figure, and a typical output third-order intercept (OIP3)
of ≤33 dBm, requiring only 60 mA from a 5 V drain supply voltage.
The saturated output power (PSAT) of ≤20.5 dBm typical enables the
low noise amplifier (LNA) to function as a local oscillator (LO) driver
for many Analog Devices, Inc., balanced, in-phase and quadrature
(I/Q), or image rejection mixers.
The ADH8412S also features inputs and outputs that are internally
matched to 50 Ω, making the device ideal for surface-mount
technology (SMT)-based, space applications.
The ADH8412S is housed in a 2 mm × 2 mm, 6-lead lead
frame chip scale package (LFCSP).
Additional application and technical information can be found in the
Commercial Space Products Program brochure and HMC8412 data
sheet.
Applications
- Aerospace
- Satellite missions across multiple orbits:
- Commercial space low (CSL) product flow targeted at short
mission-life low Earth orbit (LEO) missions
- CSH product flow targeted at high-reliability, longer-life, or
higher-orbit missions
- Military radar
- Telecommunications
- Satellite communications
- Avionics
- Electronic warfare
