HMC756

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1 Watt Power Amplifier Chip, 16 - 24 GHz

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概述

  • Saturated Output Power: +33 dBm @ 28% PAE
  • High Output IP3: +41 dBm
  • High Gain: 23 dB
  • DC Supply: +7V @ 790 mA
  • DC Blocked RF I/Os
  • No External Matching Required
  • Die Size: 2.4 x 1.6 x 0.1 mm

The HMC756 is a three stage GaAs pHEMT MMIC 1 Watt Power Amplifier which operates between 16 and 24 GHz. The HMC756 provides 23 dB of gain, and +33 dBm of saturated output power at 28% PAE from a +7V supply. The RF I/Os are DC blocked and matched to 50 Ohms for ease of integration into Multi-Chip-Modules (MCMs). All data is taken with the chip in a 50 Ohm test fixture connected via 0.025 mm (1 mil) diameter wire bonds of length 0.31 mm (12 mils).

Applications

  • Point-to-Point Radios
  • Point-to-Multi-Point Radios
  • VSAT
  • Military & Space

HMC756
1 Watt Power Amplifier Chip, 16 - 24 GHz
hmc756_fbl
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