HMC756
过期1 Watt Power Amplifier Chip, 16 - 24 GHz
Viewing:
产品详情
- Saturated Output Power: +33 dBm @ 28% PAE
- High Output IP3: +41 dBm
- High Gain: 23 dB
- DC Supply: +7V @ 790 mA
- DC Blocked RF I/Os
- No External Matching Required
- Die Size: 2.4 x 1.6 x 0.1 mm
The HMC756 is a three stage GaAs pHEMT MMIC 1 Watt Power Amplifier which operates between 16 and 24 GHz. The HMC756 provides 23 dB of gain, and +33 dBm of saturated output power at 28% PAE from a +7V supply. The RF I/Os are DC blocked and matched to 50 Ohms for ease of integration into Multi-Chip-Modules (MCMs). All data is taken with the chip in a 50 Ohm test fixture connected via 0.025 mm (1 mil) diameter wire bonds of length 0.31 mm (12 mils).
Applications
- Point-to-Point Radios
- Point-to-Multi-Point Radios
- VSAT
- Military & Space
参考资料
最新评论
需要发起讨论吗? 没有关于 HMC756的相关讨论?是否需要发起讨论?
在EngineerZone®上发起讨论