HMC-ALH376-DIE

RECOMMENDED FOR NEW DESIGNS

Low Noise Amplifier Chip, 35 - 45 GHz

Data Sheet Product Selection Table
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Overview

  • Noise Figure: 2 dB
  • Gain: 16 dB @ 40 GHz
  • P1dB Output Power: +6 dBm
  • Supply Voltage: +4V @ 87 mA
  • Die Size: 2.7 x 1.44 x 0.1 mm

The HMC-ALH376 is a GaAs MMIC HEMT three stages, self-biased Low Noise Amplifier die which operates between 35 and 45 GHz. The amplifier provides 16 dB of gain, a 2 dB noise figure and +6 dBm of output power at 1 dB gain compression while requiring only 87 mA from a single +4V supply. This self-biased LNA is ideal for integration into hybrid assemblies or Multi-Chip-Modules (MCMs) due to its small size (3.9 mm²).

Applications

  • Point-to-Point Radios
  • Point-to-Multi-Point Radios
  • Test Equipment & Sensors
  • Military & Space
HMC-ALH376-DIE
Low Noise Amplifier Chip, 35 - 45 GHz
hmc-alh376_fbl
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Documentation

Data Sheet 1

Application Note 5

Technical Articles 1

Data Sheet

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Software Resources

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Tools & Simulations

ADIsimRF

ADIsimRF is an easy-to-use RF signal chain calculator. Cascaded gain, noise, distortion and power consumption can be calculated, plotted and exported for signal chains with up to 50 stages. ADIsimRF also includes an extensive data base of device models for ADI’s RF and mixed signal components.

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S-Parameter 1

Sys-Parameter Models for Keysight Genesys

Sys-Parameter models contain behavioral parameters, such as P1dB, IP3, gain, noise figure and return loss, which describe nonlinear and linear characteristics of a device.

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