The MAT01 is a monolithic dual NPN transistor. An exclusive Silicon Nitride "Triple-Passivation" process provides excellent stability of critical parameters over both temperature and time. Matching characteristics include offset voltage of 40µV, temperature drift of 0.15µV/°C, and hFE matching of 0.7%.
Very high h is provided over a six decade range of collector current, including an exceptional hFE of 590 at a collector current of only 10nA. The high gain at lower collector current makes the MAT01 ideal for use in low-power, low-level input stages.
|Title||Content Type||File Type|
|MAT01: Matched Monolithic Dual Transistor Data Sheet (Rev C, 04/2013) (pdf, 873 kB)||Data Sheets|
|AN-139: A Low Voltage Power Supply Watch-Dog Monitor Circuit (pdf, 105 kB)||Application Notes|
|RAQs index||Rarely Asked Questions||HTML|
|Glossary of EE Terms||Glossary||HTML|
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