0.01 GHz to 10 GHz, GaAs, pHEMT, MMIC, Low Noise Amplifier
The HMC8410 is a gallium arsenide (GaAs), monolithic microwave integrated circuit (MMIC), pseudomorphic high electron mobility transistor (pHEMT), low noise wideband amplifier that operates from 0.01 GHz to 10 GHz. The HMC8410 provides a typical gain of 19.5 dB, a 1.1 dB typical noise figure, and a typical output IP3 of 33 dBm, requiring only 65 mA from a 5 V supply voltage. The saturated output power (PSAT) of up to 22.5 dBm enables the low noise amplifier (LNA) to function as a local oscillator (LO) driver for many of Analog Devices, Inc., balanced, I/Q or image rejection mixers.
The HMC8410 also features inputs/outputs (I/Os) that are internally matched to 50 Ω, making it ideal for surface-mounted technology (SMT)-based, high capacity microwave radio applications.
The HMC8410 is housed in a RoHS-compliant, 2 mm × 2 mm, LFCSP package.
Multifunction pin names may be referenced by their relevant function only.
- Software defined radios
- Electronics warfare
- Radar applications
At least one model within this product family is in production and available for purchase. The product is appropriate for new designs but newer alternatives may exist.
The HMC8410 evaluation board is a 4-layer board fabricated using a Rogers 4350 and the best practices for high frequency RF design. The RF input and RF output traces have a 50 Ω characteristic impedance.
The HMC8410 evaluation board and populated components operate over the −40°C to +85°C ambient temperature range.
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