RH1013M

PRODUCTION

Dual Precision Operational Amplifier

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Overview

  • MIL-PRF-38535 Class V Compliant Version – 5962R88760
  • Guaranteed Performance Over –55 to +125°C
    • Input Offset Voltage: 550µV
    • Low Offset Voltage Drift: 2.5µV/°C
    • Low Offset Current: 20nA
  • Gain Bandwidth Product: 500kHz
  • Minimum Slew Rate: 0.2V/mS
  • Low Current Noise: Typically 0.07pA/√Hz
  • Maximum Supply Current: 0.7mA per Amplifier
  • Supply Voltage ±22V (Absolute Maximum)
  • Differential Input Voltage ±30V (Absolute Maximum)
  • Single Supply Operation
  • Available in CERPAC, Ceramic DIP, Metal Can or as Unpackaged Dice

Radiation Performance

  • Total Ionizing Dose (TID) Tolerance, per TM1019.8, MIL-STD-883:
    • 200kRad (Si), per condition A at 50Rads(Si)/sec
    • 50kRad (Si), per condition D at 10mRads(Si)/sec
    • ELDRS Pass 50kRad(Si)
  • Please Also Refer to RH1014 Web Page for Radiation Reports

The RH1013M is the first precision dual operational amplifier which directly upgrades designs in the industry standard 8-pin DIP LM158/MC1558/OP-221 pin configuration. Low offset voltage (300µV max), low drift (≤2.5µV/°C), low offset current (≤1.5nA), and high gain (1.2 million min) combine to make the RH1013M two truly precision amplifiers in one package.

The wafer lots are processed to Analog Devices’ in-house Class S flow to yield circuits usable in stringent military applications.

Applications

  • Precision Instrumentation Amplifiers
  • Strain Gauge Signal Conditioners
  • Thermocouple Amplifiers
  • 4mA to 20mA Current Loop Transmitters
  • Multiple Limit Threshold Detection
  • Active Filters
  • Multiple Gain Blocks

RH1013M
Dual Precision Operational Amplifier
5V Powered Precision Instrumentation Amplifier RH1013M BI Application Circuit RH1013M TDBC Application Circuit RH1013M Pin Configuration RH1013M Pin Configuration
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