MAX2430

Low-Voltage Silicon RF Power-Amplifier Predriver

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Overview

Operates Over the 800MHz to 1000MHz Frequency Range
Delivers 125mW at 915MHz from +3.6V Supply (100mW typical from +3.0V supply)
Operates Directly from 3-Cell NiCd or 1-Cell Lithium-Ion Battery
Over 32dB Power Gain
RF Power Envelope Ramping is Programmable with One External Capacitor
Input Matched to 50Ω (VSWR < 2:1)
15dB Output Power Control Range
1µA Typical Shutdown Current

The MAX2430 is a versatile, silicon RF power amplifier that operates directly from a 3V to 5.5V supply, making it suitable for 3-cell NiCd or 1-cell lithium-ion battery applications. It is designed for use in the 800MHz to 1000MHz frequency range and, at 915MHz, can produce +21dBm (125mW) of output power with greater than 32dB of gain at V_CC = 3.6V.

A unique shutdown function provides an off supply current of typically less than 1µA to save power during "idle slots" in time-division multiple-access (TDMA) transmissions. An external capacitor sets the RF output power envelope ramp time. External power control is also possible over a 15dB range. The amplifier's input is matched on-chip to 50Ω. The output is an open collector that is easily matched to a 50Ω load with few external components.

The MAX2430 is ideal as a driver amplifier for portable and mobile telephone systems, or as a complete power amplifier for other low-cost applications, such as those in the 915MHz spread-spectrum ISM band. It is fabricated with Maxim's high-frequency bipolar transistor process and is available in a thermally enhanced, 16-pin narrow SO and miniature 16-pin PwrQSOP packages with heat slug.

Applications