MAT12
Info: : PRODUCTION
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MAT12

Audio, Dual-Matched NPN Transistor

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Info: : PRODUCTION tooltip
Info: : PRODUCTION tooltip
Part Details
Part Models 1
1ku List Price Starting From $21.12
Features
  • Very low voltage noise: 1nV/√Hz max @ 100Hz
  • Excellent current gain match: 0.5% typical
  • Low offset voltage (VOS): 200 µV maximum
  • Outstanding offset voltage drift:0.03 µV/°C typical
  • High gain bandwidth product: 200 MHz
Additional Details
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The MAT12 is a dual, NPN-matched transistor pair that is specifically designed to meet the requirements of ultralow noise audio systems.

With its extremely low input base spreading resistance (rbb' is typically 28 Ω) and high current gain (hFE typically exceeds 600 at IC = 1 mA), the MAT12 can achieve outstanding signal-to-noise ratios. The high current gain results in superior performance compared to systems incorporating commercially available monolithic amplifiers.

Excellent matching of the current gain (ΔhFE) to about 0.5% and low VOS of less than 10 µV typical make the MAT12 ideal for symmetrically balanced designs, which reduce high-order amplifier harmonic distortion.

Stability of the matching parameters is guaranteed by protection diodes across the base emitter junction. These diodes prevent degradation of beta and matching characteristics due to reverse biasing of the base emitter junction.

The MAT12 is also an ideal choice for accurate and reliable current biasing and mirroring circuits. Furthermore, because the accuracy of a current mirror degrades exponentially with mismatches of VBE between transistor pairs, the low VOS of the MAT12 does not need offset trimming in most circuit applications.

The MAT12 is a good replacement for the MAT02, and its performance and characteristics are guaranteed over the extended temperature range of −40°C to +85°C

Part Models 1
1ku List Price Starting From $21.12

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Part Model Pin/Package Drawing Documentation CAD Symbols, Footprints, and 3D Models
MAT12AHZ
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Product Lifecycle

PCN

Nov 9, 2011

- 11_0050

Transfer of ADI Hermetics Assembly location from Paranaque, Manila to General Trias, Cavite Philippines

Nov 9, 2011

- 11_0182

Test Site Transfer from Analog Devices Philippines Inc in Paranaque to Analog Devices General Trias in Cavite, Philippines

Jun 1, 2011

- 11_0088

Top and Bottom Mark Standardization for Certain LCC (Leadless Chip Carrier) and Metal Can Packages

Filter by Model

reset

Reset Filters

Part Models

Product Lifecycle

PCN

Nov 9, 2011

- 11_0050

arrow down

Transfer of ADI Hermetics Assembly location from Paranaque, Manila to General Trias, Cavite Philippines

Nov 9, 2011

- 11_0182

arrow down

Test Site Transfer from Analog Devices Philippines Inc in Paranaque to Analog Devices General Trias in Cavite, Philippines

Jun 1, 2011

- 11_0088

arrow down

Top and Bottom Mark Standardization for Certain LCC (Leadless Chip Carrier) and Metal Can Packages

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