Features and Benefits

  • Low VOS (VBE match): 40 μV typical, 100 μV maximum
  • Low TCVOS: 0.5 μV/°C maximum
  • High hFE: 500 minimum
  • Excellent hFE linearity from 10 nA to 10 mA
  • Low noise voltage:
    0.23 μV p-p from 0.1 Hz to 10 Hz
  • High breakdown: 45 V min

Product Details

The MAT01 is a monolithic dual NPN transistor. An exclusive Silicon Nitride "Triple-Passivation" process provides excellent stability of critical parameters over both temperature and time. Matching characteristics include offset voltage of 40µV, temperature drift of 0.15µV/°C, and hFE matching of 0.7%.

Very high h is provided over a six decade range of collector current, including an exceptional hFE of 590 at a collector current of only 10nA. The high gain at lower collector current makes the MAT01 ideal for use in low-power, low-level input stages.

Product Lifecycle icon-not-recommended Not Recommended for New Designs

This designates products ADI does not recommend broadly for new designs.

Design Resources

ADI has always placed the highest emphasis on delivering products that meet the maximum levels of quality and reliability. We achieve this by incorporating quality and reliability checks in every scope of product and process design, and in the manufacturing process as well.  "Zero defects" for shipped products is always our goal.

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The USA list pricing shown is for BUDGETARY USE ONLY, shown in United States dollars (FOB USA per unit for the stated volume), and is subject to change. International prices may differ due to local duties, taxes, fees and exchange rates. For volume-specific price or delivery quotes, please contact your local Analog Devices, Inc. sales office or authorized distributor. Pricing displayed for Evaluation Boards and Kits is based on 1-piece pricing.

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