MAT01

NOT RECOMMENDED FOR NEW DESIGNS

Matched Monolithic Dual Transistor

Part Models
4
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Part Details

  • Low VOS (VBE match): 40 μV typical, 100 μV maximum
  • Low TCVOS: 0.5 μV/°C maximum
  • High hFE: 500 minimum
  • Low noise voltage:
    0.23 μV p-p from 0.1 Hz to 10 Hz
  • High breakdown: 45 V min
  • Excellent hFE linearity from 10 nA to 10 mA
MAT01
Matched Monolithic Dual Transistor
MAT01 Pin Configuration
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