MAT01

NOT RECOMMENDED FOR NEW DESIGNS

Matched Monolithic Dual Transistor

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Overview

  • Low VOS (VBE match): 40 μV typical, 100 μV maximum
  • Low TCVOS: 0.5 μV/°C maximum
  • High hFE: 500 minimum
  • Low noise voltage:
    0.23 μV p-p from 0.1 Hz to 10 Hz
  • High breakdown: 45 V min
  • Excellent hFE linearity from 10 nA to 10 mA

The MAT01 is a monolithic dual NPN transistor. An exclusive Silicon Nitride "Triple-Passivation" process provides excellent stability of critical parameters over both temperature and time. Matching characteristics include offset voltage of 40µV, temperature drift of 0.15µV/°C, and hFE matching of 0.7%.

Very high h is provided over a six decade range of collector current, including an exceptional hFE of 590 at a collector current of only 10nA. The high gain at lower collector current makes the MAT01 ideal for use in low-power, low-level input stages.

APPLICATIONS

  • Weigh scales
  • Low noise, op amp, front end
  • Current mirror and current sink/source
  • Low noise instrumentation amplifiers
  • Voltage controlled attenuators
  • Log amplifiers

MAT01
Matched Monolithic Dual Transistor
MAT01 Pin Configuration
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