Part Details
Features
  • P1dB output power: +27 dBm, +28 dBm
  • PSAT output power: +29 dBm, +30 dBm
  • Gain: 13 dB, 14 dB
  • Output IP3: +36 dBm, +38 dBm
  • Supply voltage: +10 V at 250 mA
  • 50 Ω matched input/output
  • Die size: 2.82 × 1.5 × 0.1 mm
  • 32-lead, 5 × 5 mm, surface-mount technology (SMT) package
Additional Details
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The HMC994 devices are GaAs, monolithic microwave integrated circuit (MMIC), PHEMT distributed power amplifiers which operate between dc and 28 GHz or dc and 30 GHz. These power amplifiers provide 13 dB or 14 dB of gain, +36 dB or +38 dB of output IP3, and +27 dBm or +28 dBm of output power at 1 dB gain compression, while requiring 250 mA from a +10 V supply. The gain slopes of these devices make them ideal for EW, ECM, radar, and test equipment applications. The inputs/outputs of these devices are internally matched to 50 Ω for ease of integration into multichip modules (MCMs).

The power amplifier is available in a leadless, QFN, 5 × 5 mm, surface-mount package. All data is taken with the chip connected via two 0.025 mm (1 mil) wire bonds of minimal 0.31 (12 mils) length.

Applications

  • Test instrumentation
  • Microwave radio and VSAT
  • Military and space
  • Telecom infrastructure
  • Fiber optics

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