Features and Benefits

  • High saturated output power (PSAT): 34 dBm
  • High output IP3: 39 dBm
  • High gain: 23 dB
  • DC supply: 5.5 V at 1300 mA
  • No external matching required
  • 32-lead, 5 mm × 5 mm LFCSP_CAV package

Product Details

The HMC943APM5E is a four stage, gallium arsenide (GaAs), pseudomorphic high electron mobility transistor (pHEMT), monolithic microwave integrated circuit (MMIC), >1.5 W power amplifier that operates between 24 GHz to 34 GHz. The HMC943APM5E provides 23 dB of gain, 34 dBm of saturated output power (PSAT), and 23% power added efficiency (PAE) from a 5.5 V supply. The high output third-order intercept (IP3) of 39 dBm makes the HMC943APM5E ideal for microwave radio applications. A power detector output is also available. The HMC943APM5E amplifier input/outputs (I/Os) are internally matched to 50 Ω. The device is packaged in a leadless, 5 mm × 5 mm, surface-mount LFCSP_CAV package, and requires no external matching components.


  • Point to point radios
  • Point to multipoint radios
  • Microwave radios, very small aperture terminals (VSATs), and satellite communications (SATCOM)
  • Military and space

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At least one model within this product family is in production and available for purchase. The product is appropriate for new designs but newer alternatives may exist.

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Pricing displayed is based on 1-piece. The USA list pricing shown is for budgetary use only, shown in United States dollars (FOB USA per unit), and is subject to change. International prices may vary due to local duties, taxes, fees and exchange rates.