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HMC907APM5E

PRODUCTION

GaAs pHEMT MMIC Power Amplifier 0.2 - 22 GHz

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Overview

  • High P1dB Output Power: +28 dBm
  • High Gain: 14 dB
  • High Output IP3: +40 dBm
  • Single Supply: +10 V @ 350 mA
  • 50 Ω Matched Input/Output
  • 32 Lead 5x5 mm SMT Package: 25 mm2

The HMC907APM5E is a GaAs MMIC pHEMT Distributed Power Amplifier which operates between 0.2 and 22 GHz. This self-biased power amplifier provides 14 dB of gain, +40 dBm output IP3 and +28 dBm of output power at 1 dB gain compression while requiring only 350 mA from a +10 V supply. Gain flatness is excellent at ±0.7 dB from 0.2 to 22 GHz making the HMC907APM5E ideal for EW, ECM, Radar and test equipment applications. The HMC907APM5E amplifier I/Os are internally matched to 50 Ω facilitating integration into Mutli-Chip-Modules (MCMs) and is packaged in a leadless QFN 5x5 mm surface mount package, and requires no external matching components.

Applications

  • Test instrumentation
  • Military & space

HMC907APM5E
GaAs pHEMT MMIC Power Amplifier 0.2 - 22 GHz
HMC907APM5E Functional Block Diagram
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Documentation

Data Sheet

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Software Resources

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Tools & Simulations

ADIsimRF

ADIsimRF is an easy-to-use RF signal chain calculator. Cascaded gain, noise, distortion and power consumption can be calculated, plotted and exported for signal chains with up to 50 stages. ADIsimRF also includes an extensive data base of device models for ADI’s RF and mixed signal components.

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Sys-Parameter Models for Keysight Genesys

Sys-Parameter models contain behavioral parameters, such as P1dB, IP3, gain, noise figure and return loss, which describe nonlinear and linear characteristics of a device.

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S-Parameter 1


Evaluation Kits

EVAL-HMC907APM5
HMC907APM5 Evaluation Board

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