The HMC907 devices are GaAs, monolithic microwave integrated circuit (MMIC), PHEMT distributed power amplifiers which operate between 0.2 GHz and 22 GHz. These self-biased power amplifiers provide 12 dB and 14 dB of gain, +36 dBm or +38 dBm of output IP3, and +26 dBm or +27 dBm of output power at 1 dB gain compression, while requiring only 350 mA from a +10 V supply. Gain flatness is excellent at +0.6 dB or +0.7 dB from 0.2 GHz to 22 GHz, making these devices ideal for EW, ECM, radar, and test equipment applications. The inputs/outputs of these devices are internally matched to 50 Ω for ease of integration into multichip modules (MCMs). The half-watt power amplifier SMT is packaged in a leadless, QFN, 5 × 5 mm, surface-mount package and requires no external matching components. All data is taken with the chip connected via two 0.025 mm (1 mil) wire bonds of minimal 0.31 mm (12 mils) length.

Applications

• Test instrumentation
• Microwave radio and VSAT
• Military and space
• Telecom infrastructure
• Fiber optics