HMC9059

The HMC9059 is a compact gallium arsenide (GaAs), pseudomorphic high electron mobility transistor (pHEMT), monolithic microwave integrated circuit (MMIC) upconverter in a RoHS compliant, low stress injection molded plastic LFCSP package that operates from 9.5 GHz to 13.5 GHz. This device provides a small signal conversion gain of 15 dB with 22 dBc of sideband rejection. The HMC9059 uses a radio frequency (RF) amplifier preceded by an in-phase/quadrature (I/Q) mixer, where the local oscillator (LO) is driven by a driver amplifier. IF1 and IF2 mixer inputs are provided, and an external 90° hybrid is needed to select the required sideband. The I/Q mixer topology reduces the need for filtering of the unwanted sideband. The HMC9059 is a much smaller alternative to hybrid style single-sideband (SSB) upconverter assemblies, and it eliminates the need for wire bonding by allowing the use of surface-mount manufacturing techniques.

Applications

• Point to point and point to multipoint radios
• Military radars, electronic warfare (EW) and electronic intelligence (ELINT)
• Satellite communications
• Sensors