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HMC902LP3E

PRODUCTION

5 GHz to 11 GHz GaAs, pHEMT, MMIC, Low Noise Amplifier

Data Sheet (Rev. E) Product Selection Table

Part Models: 2
1ku List Price: price unavailable

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Overview

Low noise figure: 1.8 dB typical
High gain: 19.5 dB
High P1dB output power: 16 dBm typical
Single supply: 3.5 V at 80 mA
Output IP3: 28 dBm
50 Ω matched input/output
Self biased with optional bias control for quiescent drain control (I_DQ) reduction.
3 mm × 3 mm, 16-lead frame chip scale (LFCSP) package: 9 mm²

The HMC902LP3E is a gallium arsenide (GaAs), pseudomorphic high electron mobility transistor (pHEMT), monolithic microwave integrated circuit (MMIC) low noise amplifier (LNA), which is self biased with optional bias control for IDQ reduction. The HMC902LP3E is housed in a leadless 3 mm × 3 mm plastic surface mount package. The amplifier operates between 5 GHz and 11 GHz, providing 19.5 dB of small signal gain, 1.8 dB noise figure, and 28 dBm of output IP3, while requiring only 80 mA from a 3.5 V supply.

The P1dB output power of 16 dBm enables the LNA to function as a local oscillator (LO) driver for balanced, I/Q, or image reject mixers. The HMC902LP3E also features inputs/outputs that are dc blocked and internally matched to 50 Ω, making it ideal for high capacity microwave radios and C band, very small aperture terminal (VSAT) applications.

Applications

Point to point radios
Point to multi point radios
Military and space
Test instrumentation

Part Models: 2
1ku List Price: price unavailable

Documentation

Data Sheet 1

HMC902LP3E: 5 GHz to 11 GHz GaAs, pHEMT, MMIC, Low Noise Amplifier Datasheet (Rev.E) 10/20/2015

Application Note 5

Thermal Management for Surface Mount Components General Application Note 11/11/2015

AN-2591: When It Comes to Long-Term Reliability of RF Amplifier ICs, Focus First on Die Junction Temperature 08/05/2024

AN-2622: Selecting an Analog Devices RF Low Noise Amplifier 09/04/2025

AN-1363: Meeting Biasing Requirements of Externally Biased RF/Microwave Amplifiers with Active Bias Controllers 05/13/2020

AN-1604: Thermal Management Calculations for RF Amplifiers in LFCSP and Flange Packages 08/01/2019

ADI has always placed the highest emphasis on delivering products that meet the maximum levels of quality and reliability. We achieve this by incorporating quality and reliability checks in every scope of product and process design, and in the manufacturing process as well. "Zero defects" for shipped products is always our goal. View our quality and reliability program and certifications for more information.

Part Model	Pin/Package Drawing	Documentation	CAD Symbols, Footprints, and 3D Models
HMC902LP3E	16-Lead LFCSP (3mm x 3mm w/ EP)	Material Declaration Reliablity Data Package Resources	Ultra Librarian SamacSys
HMC902LP3ETR	16-Lead LFCSP (3mm x 3mm w/ EP)	Material Declaration Reliablity Data Package Resources	Ultra Librarian SamacSys

Part Models	Product Lifecycle	PCN

Mar 29, 2023 - 22_0048 Addition of ASE Korea as an Alternate Assembly Site for Select LFCSP Products
		PCN22_0048_Form Material_Report Qualification Results Summary Detailed Change Description
HMC902LP3E	PRODUCTION
HMC902LP3ETR	PRODUCTION

This is the most up-to-date revision of the Data Sheet.

Software Resources

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Tools & Simulations

ADIsimRF

ADIsimRF is an easy-to-use RF signal chain calculator. Cascaded gain, noise, distortion and power consumption can be calculated, plotted and exported for signal chains with up to 50 stages. ADIsimRF also includes an extensive data base of device models for ADI’s RF and mixed signal components.

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S-Parameter 1

HMC902LP3E S-Parameters

Sys-Parameter Models for Keysight Genesys

Sys-Parameter models contain behavioral parameters, such as P1dB, IP3, gain, noise figure and return loss, which describe nonlinear and linear characteristics of a device.

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