Features and Benefits
- Low noise figure: 1.9 dB typical at 0.01 GHz to 7 GHz
- Single positive supply (self biased)
- High gain: 19.5 dB typical at 0.01 GHz to 7 GHz
- High OIP3: 35 dBm typical at 0.01 GHz to 7 GHz
- RoHS-compliant, 2 mm × 2 mm, 6-lead LFCSP
The HMC8413 is a gallium arsenide (GaAs), monolithic microwave integrated circuit (MMIC), pseudomorphic high electron mobility transistor (pHEMT), low noise wideband amplifier that operates from 0.01 GHz to 9 GHz.
The HMC8413 provides a typical gain of 19.5 dB, a 1.9 dB typical noise figure, and a typical output third-order intercept (OIP3) of 35 dBm at 0.01 GHz to 7 GHz, requiring only 95 mA from a 5 V supply voltage. The saturated output power (PSAT) of 22 dBm typical at 0.01 GHz to 7 GHz enables the low noise amplifier to function as a local oscillator (LO) driver for many of Analog Devices, Inc., balanced, in-phase/quadrature (I/Q) or image rejection mixers.
The HMC8413 also features inputs and outputs that are internally matched to 50 Ω, making the device ideal for surface-mounted technology (SMT)-based, high capacity microwave radio applications.
The HMC8413 is housed in an RoHS-compliant, 2 mm × 2 mm, 6-lead LFCSP.
- Test instrumentation
- Military communications
- Military radar
Product Lifecycle Recommended for New Designs
This product has been released to the market. The data sheet contains all final specifications and operating conditions. For new designs, ADI recommends utilization of these products.
Evaluation Kits (1)
The EV1HMC8413LP2F consists of a 4-layer printed circuit board (PCB) fabricated from 10 mil thick, Rogers 4350B and Isola 370HR, copper clad, forming a nominal thickness of 62 mils. The RFIN and RFOUT ports on the EV1HMC8413LP2F are populated with 3.5 mm, female coaxial connectors, and the corresponding RF traces have a 50 Ω characteristic impedance. The EV1HMC8413LP2F is populated with components suitable for use over the entire −40°C to +85°C operating temperature range of the HMC8413. To calibrate board trace losses, a through calibration path is provided between the J1 and J2 connectors. J1 and J2 must be populated with RF connectors to use the through calibration path. Refer to Table 1 and Figure 3 for the through calibration path performance.
Access the EV1HMC8413LP2F ground path and RFOUT/VDD pin through the surface-mount technology (SMT) test point connectors, GND and VDD. A supplementary test point for VBIAS is included for simple access on the RBIAS pin (see Figure 5 in the user guide for the test point assembly).
The RF traces on the EV1HMC8413LP2F are 50 Ω, grounded, coplanar waveguide. The package ground leads and the exposed pad connect directly to the ground plane. Multiple vias connect the top and bottom ground planes with particular focus on the area directly beneath the ground paddle to provide adequate electrical conduction and thermal conduction to the heat sink.
The power supply decoupling capacitors on the EV1HMC8413LP2F represent the configuration used to characterize and qualify the device. It is possible to reduce the number of capacitors, but this reduction varies from system to system. It is recommended to first remove or combine the largest capacitors that are farthest from the HMC8413 when reducing the number of capacitors.
For full details on the HMC8413, see the HMC8413 data sheet, which must be consulted in conjunction with the user guide when using the EV1HMC8413LP2F.
Tools & Simulations
ADI has always placed the highest emphasis on delivering products that meet the maximum levels of quality and reliability. We achieve this by incorporating quality and reliability checks in every scope of product and process design, and in the manufacturing process as well. "Zero defects" for shipped products is always our goal.
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