Overview
Features and Benefits
- Output power for 1 dB compression (P1dB): 21.5 dBm typical
- Saturated output power (PSAT): 22 dBm typical
- Gain: 13.5 dB typical
- Noise figure: 2 dB
- Output third order intercept (IP3): 26 dBm typical
- Supply voltage: 7 V at 68 mA
- 50 Ω matched input/output
- Die size: 2.7 mm × 1.363 mm × 0.05 mm
Product Details
The HMC8402 is a gallium arsenide (GaAs), pseudomorphic high electron mobility transistor (pHEMT), monolithic microwave integrated circuit (MMIC), low noise amplifier which operates between 2 GHz and 30 GHz. The amplifier provides 13.5 dB of gain, 2 dB noise figure, 26 dBm output IP3, and 21.5 dBm of output power at 1 dB gain compression while requiring 68 mA from a 7 V supply. The HMC8402 is self biased with only a single positive supply needed to achieve a drain current IDQ of 68 mA.
The HMC8402 amplifier input/outputs are internally matched to 50 Ω facilitating integration into multichip modules (MCMs). All data is taken with the chip connected via two 0.025 mm (1 mil) wire bonds of minimal length 0.31 mm (12 mils).
APPLICATIONS
- Test instrumentation
- Microwave radios and very small aperture terminals (VSATs)
- Military and space
- Telecommunications infrastructure
- Fiber optics
Product Lifecycle
Recommended for New Designs
This product has been released to the market. The data sheet contains all final specifications and operating conditions. For new designs, ADI recommends utilization of these products.
Documentation & Resources
Tools & Simulations
Sys-Parameter
Sys-Parameter Models for Keysight Genesys
Sys-Parameter models contain behavioral parameters, such as P1dB, IP3, gain, noise figure and return loss, which describe nonlinear and linear characteristics of a device.
S-Parameter
ZIP
HMC8402 S-Parameters
6.51 K
Design Tool
ADIsimRF
ADIsimRF is an easy-to-use RF signal chain calculator. Cascaded gain, noise, distortion and power consumption can be calculated, plotted and exported for signal chains with up to 50 stages. ADIsimRF also includes an extensive data base of device models for ADI’s RF and mixed signal components.
