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HMC8325

RECOMMENDED FOR NEW DESIGNS

71 GHz to 86 GHz, E-Band Low Noise Amplifier

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Overview

  • Gain: 21 dB typical
  • Noise figure: 3.6 dB typical
  • Output power for 1 dB compression: 13 dBm typical
  • Input third-order intercept at maximum gain: 1 dBm typical
  • Output third-order intercept at maximum gain: 22 dBm typical
  • Saturated output power: 17 dBm typical
  • Input return loss: 15 dB typical
  • Output return loss: 17 dB typical
  • Die size: 2.844 mm × 0.999 mm × 0.05 mm

The HMC8325 is an integrated E-band gallium arsenide (GaAs), monolithic microwave integrated circuit (MMIC), low noise amplifier (LNA) chip that operates from 71 GHz to 86 GHz. The HMC8325 provides 21 dB of gain, 13 dBm of output P1dB, 22 dBm of OIP3, and 17 dBm of PSAT while requiring only 50 mA from a 3 V power supply. The HMC8325 exhibits excellent linearity and is optimized for E-band communications and high capacity, wireless backhaul radio systems. All data is taken with the chip in a 50 Ω test fixture connected via a 3 mil wide × 0.5 mil thick × 7 mil long ribbon on each port.

Applications

  • E-band communication systems 
  • High capacity wireless backhauls 
  • Test and measurement

HMC8325

71 GHz to 86 GHz, E-Band Low Noise Amplifier

HMC8325 Functional Block Diagram HMC8325 Pin Configuration
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Tools & Simulations

S-Parameter 1

ADIsimRF

ADIsimRF is an easy-to-use RF signal chain calculator. Cascaded gain, noise, distortion and power consumption can be calculated, plotted and exported for signal chains with up to 50 stages. ADIsimRF also includes an extensive data base of device models for ADI’s RF and mixed signal components.

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Sys-Parameter Models for Keysight Genesys

Sys-Parameter models contain behavioral parameters, such as P1dB, IP3, gain, noise figure and return loss, which describe nonlinear and linear characteristics of a device.

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