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Features
- Gain: 21 dB typical
- Noise figure: 3.6 dB typical
- Output power for 1 dB compression: 13 dBm typical
- Input third-order intercept at maximum gain: 1 dBm typical
- Output third-order intercept at maximum gain: 22 dBm typical
- Saturated output power: 17 dBm typical
- Input return loss: 15 dB typical
- Output return loss: 17 dB typical
- Die size: 2.844 mm × 0.999 mm × 0.05 mm
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The HMC8325 is an integrated E-band gallium arsenide (GaAs), monolithic microwave integrated circuit (MMIC), low noise amplifier (LNA) chip that operates from 71 GHz to 86 GHz. The HMC8325 provides 21 dB of gain, 13 dBm of output P1dB, 22 dBm of OIP3, and 17 dBm of PSAT while requiring only 50 mA from a 3 V power supply. The HMC8325 exhibits excellent linearity and is optimized for E-band communications and high capacity, wireless backhaul radio systems. All data is taken with the chip in a 50 Ω test fixture connected via a 3 mil wide × 0.5 mil thick × 7 mil long ribbon on each port.
Applications
- E-band communication systems
- High capacity wireless backhauls
- Test and measurement
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HMC8325
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| Part Model | Pin/Package Drawing | Documentation | CAD Symbols, Footprints, and 3D Models |
|---|---|---|---|
| HMC8325 | CHIPS OR DIE |
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| HMC8325-SX | CHIPS OR DIE |
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