Features and Benefits
- High PSAT: 46 dBm
- High power gain: 20 dB
- High PAE: 38%
- Instantaneous bandwidth: 0.3 GHz to 6 GHz
- Supply voltage: VDD = 50 V at 1300 mA
- 10-lead LDCC package
- High output power: 45.5 dBm typical at PIN = 24 dBm
- High power gain: 22 dB typical at PIN = 24 dBm
- High PAE: 40% typical at PIN = 28 dBm
- Die size: 4.8 mm × 3.4 mm × 0.1 mm
The HMC8205BF10 is a gallium nitride (GaN) broadband power amplifier delivering 45.5 dBm (35 W) with 38% power added efficiency (PAE) across an instantaneous bandwidth of 0.3 GHz to 6 GHz. No external matching is required to achieve full band operation. Additionally, no external inductor is required to bias the amplifier. Also, dc blocking capacitors for the RFIN and RFOUT pins are integrated into the HMC8205BF10.
The HMC8205BF10 is ideal for pulsed or continuous wave (CW) applications, such as military jammers, wireless infrastructure, radar, and general-purpose amplification.
The HMC8205BF10 amplifier is a 10-lead ceramic leaded chip carrier (LDCC).
The HMC8205BCHIPS is a gallium nitride (GaN), broadband power amplifier that delivers 45.5 dBm (35 W) with 40% power added efficiency (PAE) across an instantaneous bandwidth of 0.4 GHz to 6 GHz. No external matching is required to achieve full band operation. No external inductor is required to bias the amplifier. In addition, dc blocking capacitors for the RFIN and RFOUT pins are integrated into the HMC8205BCHIPS.
The HMC8205BCHIPS is ideal for pulsed or continuous wave (CW) applications, such as military jammers, wireless infrastructure, radar, and general-purpose amplification.
- Military jammers
- Commercial and military radar
- Power amplifier stage for wireless infrastructure
- Test and measurement equipment
Product Lifecycle Recommended for New Designs
This product has been released to the market. The data sheet contains all final specifications and operating conditions. For new designs, ADI recommends utilization of these products.
Evaluation Kits (1)
The EV1HMC8205BF10 evaluation board is a two layer PCB fabricated using 10 mil thick Rogers 4350B copper clad. The PCB is mounted to a copper heat spreader which assists in providing thermal relief to the part as well as mechanical support to the PCB. Mounting holes allow for easy attachment to larger heat sinks for improved thermal management. The RFIN and RFOUT ports are populated by 2.9 mm female coaxial connectors and their respective RF traces have a 50 ohm characteristic impedance. The board is populated with components suitable for use over the entire Operating Temperature range of the part. Please refer to the HMC8205 data sheet for information regarding DC connections, biasing, and typical performance.
Documentation & Resources
GaN Breaks Barriers—RF Power Amplifiers Go Wide and High9/1/2017 Analog Dialogue
Tools & Simulations
Sys-Parameter models contain behavioral parameters, such as P1dB, IP3, gain, noise figure and return loss, which describe nonlinear and linear characteristics of a device.
ADIsimRF is an easy-to-use RF signal chain calculator. Cascaded gain, noise, distortion and power consumption can be calculated, plotted and exported for signal chains with up to 50 stages. ADIsimRF also includes an extensive data base of device models for ADI’s RF and mixed signal components.
ADI has always placed the highest emphasis on delivering products that meet the maximum levels of quality and reliability. We achieve this by incorporating quality and reliability checks in every scope of product and process design, and in the manufacturing process as well. "Zero defects" for shipped products is always our goal.
Sample & Buy
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Pricing displayed is based on 1-piece. The USA list pricing shown is for budgetary use only, shown in United States dollars (FOB USA per unit), and is subject to change. International prices may vary due to local duties, taxes, fees and exchange rates.