HMC8119

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81 GHz to 86 GHz, E-Band I/Q Upconverter 


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Overview

  • Conversion loss: 10 dB typical
  • Sideband rejection: 22 dBc typical Input power for 1 dB compression (P1dB): 16 dBm typical
  • Input third-order intercept (IP3): 24 dBm typical
  • Input second-order intercept (IP2): −5 dBm typical 
  • 6× local oscillator (LO) leakage at RFOUT: −23 dBm typical 
  • RF return loss: 12 dB typical 
  • LO return loss: 20 dB typical 
  • Die size: 3.601 mm × 1.609 mm × 0.05 mm

The HMC8119 is an integrated E-band gallium arsenide (GaAs) pseudomorphic (pHEMT) monolithic microwave integrated circuit (MMIC), in-phase/quadrature (I/Q) upconverter chip that operates from 81 GHz to 86 GHz. The HMC8119 provides a small signal conversion loss of 10 dB with 22 dBc of sideband rejection across the frequency band. The device uses an image rejection mixer that is driven by a 6× LO multiplier. Differential I and Q mixer inputs are provided. The inputs can be driven with differential I and Q baseband waveforms for direct conversion applications. Alternatively, the inputs can be driven using an external 90° hybrid and two external 180° hybrids for single-sideband applications. All data includes the effect of a 1 mil gold wire wedge bond on the intermediate frequency (IF) ports.

Applications

  • E-band communication systems
  • High capacity wireless backhaul
  • Test and measurement

HMC8119
81 GHz to 86 GHz, E-Band I/Q Upconverter 

HMC8119 Functional Block Diagram HMC8119 Pin Configuration
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