HMC755

Obsolete

1 Watt Power Amplifier SMT, 2.3 - 2.8 GHz

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Overview

  • High Gain: 31 dB
  • High PAE: 28% @ +33 dBm Pout
  • Low EVM: 2.5% @ Pout = +25 dBm with 54 Mbps OFDM Signal
  • High Output IP3: +43 dBm
  • Integrated Detector & Power Control
  • 24 Lead 4x4mm QFN Package: 16mm

The HMC755LP4E is a high gain, high linearity GaAs InGaP HBT MMIC Power amplifier covering 2.3 to 2.8 GHz. The amplifier provides 31 dB of gain and +33 dBm of saturated power from a single +5V supply. The power control pins (VEN1, 2, 3) can be used to reduce the RF output power/quiescent current, or for full power down of the PA. The integrated output power detector (VDET) is internally coupled and requires no external components. For +25 dBm OFDM output power (64 QAM, 54 Mbps), the HMC755LP4E achieves an error vector magnitude (EVM) of only 2.5% making it ideal for WiMAX/LTE/4G Applications. The amplifier is packaged in a compact QFN SMT package and requires a minimum of external matching components.

Applications

  • Cellular/3G & LTE/4G
  • WiMAX, WiBro & Fixed Wireless
  • Military & SATCOM
  • Test Equipment

Suggested Replacement Parts

HMC414 RECOMMENDED FOR NEW DESIGNS

InGaP HBT Power Amplifier SMT, 2.2 - 2.8 GHz

HMC755
1 Watt Power Amplifier SMT, 2.3 - 2.8 GHz
hmc755lp4_fbl
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Documentation

Obsolete Data Sheet 1

Data Sheet

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Hardware Ecosystem

Parts Product Life Cycle Description
HMC414 RECOMMENDED FOR NEW DESIGNS InGaP HBT Power Amplifier SMT, 2.2 - 2.8 GHz
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Tools & Simulations

S-Parameter 1


Evaluation Kits

EVAL-HMC755LP4E
HMC755LP4E Evaluation Board

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