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Features
- High Gain: 31 dB
- High PAE: 28% @ +33 dBm Pout
- Low EVM: 2.5% @ Pout = +25 dBm with 54 Mbps OFDM Signal
- High Output IP3: +43 dBm
- Integrated Detector & Power Control
- 24 Lead 4x4mm QFN Package: 16mm
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The HMC755LP4E is a high gain, high linearity GaAs InGaP HBT MMIC Power amplifier covering 2.3 to 2.8 GHz. The amplifier provides 31 dB of gain and +33 dBm of saturated power from a single +5V supply. The power control pins (VEN1, 2, 3) can be used to reduce the RF output power/quiescent current, or for full power down of the PA. The integrated output power detector (VDET) is internally coupled and requires no external components. For +25 dBm OFDM output power (64 QAM, 54 Mbps), the HMC755LP4E achieves an error vector magnitude (EVM) of only 2.5% making it ideal for WiMAX/LTE/4G Applications. The amplifier is packaged in a compact QFN SMT package and requires a minimum of external matching components.
Applications
- Cellular/3G & LTE/4G
- WiMAX, WiBro & Fixed Wireless
- Military & SATCOM
- Test Equipment
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HMC755
Documentation
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Obsolete Data Sheet
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Obsolete Data Sheet
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Documentation
Obsolete Data Sheet 1
Software & Part Ecosystem
| Parts | Product Life Cycle | Description |
|---|---|---|
|
RECOMMENDED FOR NEW DESIGNS |
InGaP HBT Power Amplifier SMT, 2.2 - 2.8 GHz |
Evaluation Kits 1
EVAL-HMC755LP4E
HMC755LP4E Evaluation Board
Product Detail
This page contains ordering information for evaluating the HMC755LP4E.
Resources
Evaluation Kits1
Tools & Simulations 1
S-Parameter 1
S-Parameter