HMC414
Info : RECOMMENDED FOR NEW DESIGNS
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HMC414

InGaP HBT Power Amplifier SMT, 2.2 - 2.8 GHz

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Info : RECOMMENDED FOR NEW DESIGNS tooltip
Info : RECOMMENDED FOR NEW DESIGNS tooltip
Part Details
Part Models 2
1ku List Price
price unavailable
Features
  • Gain: 20 dB
  • Saturated Power: +30 dBm
  • 32% PAE
  • Supply Voltage: +2.75V to +5V
  • Power Down Capability
  • Low External Part Count
Additional Details
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The HMC414MS8G(E) is a high efficiency GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC Power amplifier which operates between 2.2 and 2.8 GHz. The amplifier is packaged in a low cost, surface mount 8 leaded package with an exposed base for improved RF and thermal performance. With a minimum of external components, the amplifier provides 20 dB of gain, +30 dBm of saturated power at 32% PAE from a +5V supply voltage. The amplifier can also operate with a 3.6V supply. Vpd can be used for full power down or RF output power/ current control.

Applications

  • BLUETOOTH
  • MMDS
Part Models 2
1ku List Price
price unavailable

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Documentation

Documentation

Part Model Pin/Package Drawing Documentation CAD Symbols, Footprints, and 3D Models
HMC414MS8GE
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HMC414MS8GETR
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Product Lifecycle

PCN

May 6, 2019

- 19_0063

Assembly Site Transfer of Select MSOP and SOIC_N E-pad Devices to Carsem Malaysia

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Part Models

Product Lifecycle

PCN

May 6, 2019

- 19_0063

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Assembly Site Transfer of Select MSOP and SOIC_N E-pad Devices to Carsem Malaysia

Software & Part Ecosystem

Software & Part Ecosystem

Tools & Simulations

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