HMC736 Data Sheet4/22/2015
Features and Benefits
- Dual Output: Fo = 14.5 - 15.0 GHz
Fo/2 = 7.25 - 7.5 GHz
- Pout: +9 dBm
- Phase Noise: -105 dBc/Hz @ 100 kHz
- No External Resonator Needed
- 24 Lead 4×4 mm QFN Package: 16 mm2
The HMC736 is a GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC VCO. The HMC736 integrates a resonator, negative resistance device, varactor diode and feature half frequency output. The VCO's phase noise performance is excellent over temperature, shock, and process due to the oscillator's monolithic structure. Power output is +9 dBm typical from a +4.2V supply voltage. The voltage controlled oscillator is packaged in a leadless QFN 4×4 mm surface mount package, and requires no external matching components.
- Point-to-Multi-Point Radios
- Test Equipment & Industrial Controls
- Military End-Use
Product Lifecycle Recommended for New Designs
This product has been released to the market. The data sheet contains all final specifications and operating conditions. For new designs, ADI recommends utilization of these products.
Evaluation Kits (1)
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|Part Number||Material Declaration||Reliability Data||Pin/Package Drawing||CAD Symbols, Footprints & 3D Models|
|HMC736LP4E||Material Declaration||Reliability Data||24-Lead QFN (4mm x 4mm w/ EP)|
|HMC736LP4ETR||Material Declaration||Reliability Data||24-Lead QFN (4mm x 4mm w/ EP)|
|Wafer Fabrication Data|
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