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HMC637ALP5E

PRODUCTION

GaAs, pHEMT, MMIC, 1 W Power Amplifier, 0.1 GHz to 6 GHz

Data Sheet (Rev. C) Product Selection Table

Part Models: 4
1ku List Price: price unavailable

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Overview

P1dB output power: 29 dBm
Gain: 13 dB
Output IP3: 44 dBm
50 Ω matched input/output
32-lead, 5 mm × 5 mm LFCSP package: 25 mm²
1 assembly/test site
1 fabrication site

Download the HMC637ASCPZ-EP data sheet (pdf)
Military temperature range: −55°C to +105°C
Product change notification
Controlled manufacturing baseline
Qualification data available on request
V62/19618 DSCC Drawing Number

The HMC637ALP5E is a gallium arsenide (GaAs), monolithic microwave integrated circuit (MMIC), pseudomorphic high electron mobility transistor (pHEMT) distributed power amplifier which operates between 0.1 GHz and 6 GHz. The amplifier provides 13 dB of gain, 44 dBm output third-order intercept (IP3), and 29 dBm of output power at 1 dB gain compression while requiring 400 mA from a 12 V supply. Gain flatness is ±0.75 dB from 100 MHz to 6 GHz making the HMC637ALP5E ideal for electronic warfare (EW), electronic counter-measure (ECM), radar and test equipment applications. The HMC637ALP5E amplifier radio frequency (RF) I/Os are internally matched to 50 Ω, and the 5 mm × 5 mm lead frame chip scale package (LFCSP) is compatible with high volume surface-mount technology (SMT) assembly equipment.

Applications

Telecom infrastructure
Microwave radio
Very small aperture terminal (VSAT)
Military and space
Test instrumentation
Fiber optics

Part Models: 4
1ku List Price: price unavailable

Documentation

Data Sheet 3

HMC637ALP5E: GaAs, pHEMT, MMIC, 1 W Power Amplifier, 0.1 GHz to 6 GHz Data Sheet (Rev.C) 04/06/2018

HMC637ASCPZ-EP: Enhanced Product Data Sheet (Rev.0) 06/26/2019

HMC637ALP5E-DSCC: Military Data Sheet 10/07/2019

Application Note 5

Thermal Management for Surface Mount Components General Application Note 11/11/2015

AN-2591: When It Comes to Long-Term Reliability of RF Amplifier ICs, Focus First on Die Junction Temperature 08/05/2024

AN-1363: Meeting Biasing Requirements of Externally Biased RF/Microwave Amplifiers with Active Bias Controllers 05/13/2020

AN-2061: Wideband Bias Tee Design Using 0402, SMD Components 11/30/2020

AN-1604: Thermal Management Calculations for RF Amplifiers in LFCSP and Flange Packages 08/01/2019

ADI has always placed the highest emphasis on delivering products that meet the maximum levels of quality and reliability. We achieve this by incorporating quality and reliability checks in every scope of product and process design, and in the manufacturing process as well. "Zero defects" for shipped products is always our goal. View our quality and reliability program and certifications for more information.

Part Model	Pin/Package Drawing	Documentation	CAD Symbols, Footprints, and 3D Models
HMC637ALP5E	32-Lead QFN (5mm x 5mm w/ EP)	Material Declaration Reliablity Data Package Resources	Ultra Librarian SamacSys
HMC637ALP5ETR	32-Lead QFN (5mm x 5mm w/ EP)	Material Declaration Reliablity Data Package Resources	Ultra Librarian SamacSys
HMC637ASCPZ-EP-PT	32-lead LFCSP (5mm x 5mm)	Material Declaration Reliablity Data Package Resources	Ultra Librarian SamacSys
HMC637ASCPZ-EP-R7	32-lead LFCSP (5mm x 5mm)	Material Declaration Reliablity Data Package Resources	Ultra Librarian SamacSys

This is the most up-to-date revision of the Data Sheet.

Software Resources

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Tools & Simulations

ADIsimRF

ADIsimRF is an easy-to-use RF signal chain calculator. Cascaded gain, noise, distortion and power consumption can be calculated, plotted and exported for signal chains with up to 50 stages. ADIsimRF also includes an extensive data base of device models for ADI’s RF and mixed signal components.

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S-Parameter 1

HMC637ALP5 S-Parameters

Sys-Parameter Models for Keysight Genesys

Sys-Parameter models contain behavioral parameters, such as P1dB, IP3, gain, noise figure and return loss, which describe nonlinear and linear characteristics of a device.

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