HMC591-Die

PRODUCTION

2 Watt Power Amplifier Chip, 6 - 10 GHz

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Overview

  • Saturated Output Power:
    +34 dBm @ 24% PAE
  • Output IP3: +43 dBm
  • Gain: 23 dB
  • DC Supply: +7V @ 1340 mA
  • 50 Ohm Matched Input/Output
  • Die Size: 2.47 x 2.49 x 0.1 mm

The HMC591 is a high dynamic range GaAs PHEMT MMIC 2 Watt Power Amplifier which operates from 6 to 10 GHz. This amplifier die provides 23 dB of gain and +34 dBm of saturated power, at 24% PAE from a +7.0V supply. Output IP3 is +43 dBm typical. The RF I/Os are DC blocked and matched to 50 Ohms for ease of integration into Multi-Chip-Modules (MCMs). All data is taken with the chip in a 50 ohm test fixture connected via 0.025mm (1 mil) diameter wire bonds of length 0.31mm (12 mils). For applications which require optimum OIP3, Idd should be set for 940 mA, to yield +43 dBm OIP3. For applications which require optimum output P1dB, Idd should be set for 1340 mA, to yield +33.5 dBm Output P1dB.


Applications

  • Point-to-Point Radios 
  • Point-to-Multi-Point Radios 
  • Test Equipment & Sensors 
  • Military End-Use 
  • Space

HMC591-Die
2 Watt Power Amplifier Chip, 6 - 10 GHz
HMC591_fbl
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Documentation

Data Sheet

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Software Resources

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Tools & Simulations

ADIsimRF

ADIsimRF is an easy-to-use RF signal chain calculator. Cascaded gain, noise, distortion and power consumption can be calculated, plotted and exported for signal chains with up to 50 stages. ADIsimRF also includes an extensive data base of device models for ADI’s RF and mixed signal components.

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Sys-Parameter Models for Keysight Genesys

Sys-Parameter models contain behavioral parameters, such as P1dB, IP3, gain, noise figure and return loss, which describe nonlinear and linear characteristics of a device.

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S-Parameter 1

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