HMC530 Data Sheet4/22/2015
Features and Benefits
- Triple Output:
Fo= 9.5 - 10.8 GHz
Fo/2= 4.75 - 5.4 GHz
Fo/4= 2.38 - 2.7 GHz
- Pout: +11 dBm
- Phase Noise:
-110 dBc/Hz @ 100 kHz Typical
- No External Resonator Needed
- QFN Leadless SMT Package, 25 mm2
The HMC530LP5(E) is a GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC VCOs. The HMC530LP5(E) integrates resonators, negative resistance devices, varactor diodes and feature half frequency and divide-by-4 outputs. The VCO's phase noise performance is excellent over temperature, shock and process due to the oscillator's monolithic structure. Power output is +11 dBm typical from a +5V supply voltage. The prescaler and RF/2 functions can be disabled to conserve current if not required. The voltage controlled oscillator is packaged in a leadless QFN 5x5 mm surface mount package, and requires no external matching components.
- Point-to-Point Radios
- Point-to-Multi-Point Radios
- Test Equipment & Industrial Controls
- Military End-Use
Product Lifecycle Production
At least one model within this product family is in production and available for purchase. The product is appropriate for new designs but newer alternatives may exist.
Evaluation Kits (1)
Documentation & Resources
Package/Assembly Qualification Test Report: Plastic Encapsulated QFN (QTR: 05006 REV: 02)4/25/2017
Package/Assembly Qualification Test Report: 32L 5x5mm QFN Package (QTR: 10009 REV: 05)11/4/2015
Semiconductor Qualification Test Report: GaAs HBT-A (QTR: 2013-00228)10/29/2015
Package/Assembly Qualification Test Report: LP3, LP4, LP5 & LP5G (QTR: 2014-00145)4/22/2015
Tools & Simulations
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Pricing displayed is based on 1-piece. The USA list pricing shown is for budgetary use only, shown in United States dollars (FOB USA per unit), and is subject to change. International prices may vary due to local duties, taxes, fees and exchange rates.