HMC465-Die

PRODUCTION

Wideband Driver Amplifier Chip, DC - 20 GHz

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Overview

  • Gain: 17 dB
  • Output Voltage to 10 Vp-p
  • Saturated Output Power: +24 dBm
  • Supply Voltage: +8V @160 mA
  • 50 Ohm Matched Input/Output
  • Die Size: 3.04 x 1.56 x 0.1 mm

The HMC465 is a GaAs MMIC PHEMT Distributed Driver Amplifier die which operates between DC and 20 GHz. The amplifier provides 17 dB of gain, 2.5 dB noise figure and +24 dBm of saturated output power while requiring only 160 mA from a +8V supply. Gain flatness is excellent at ±0.25 dB as well as ±1 deg deviation from linear phase from DC - 10 GHz making the HMC465 ideal for OC192 fiber optic LN/MZ modulator driver amplifier as well as test equipment applications. 

The HMC465 amplifier I/Os are internally matched to 50 Ohms facilitating easy integration into Multi-Chip-Modules (MCMs). All data is with the chip in a 50 Ohm test fixture connected via 0.025 mm (1 mil) diameter wire bonds of minimal length 0.31mm (12 mils).

Applications

  • OC192 LN/MZ Modulator Driver 
  • Telecom Infrastructure 
  • Test Instrumentation 
  • Military & Space

HMC465-Die
Wideband Driver Amplifier Chip, DC - 20 GHz
HMC465_fbl
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Documentation

Data Sheet

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Tools & Simulations

ADIsimRF

ADIsimRF is an easy-to-use RF signal chain calculator. Cascaded gain, noise, distortion and power consumption can be calculated, plotted and exported for signal chains with up to 50 stages. ADIsimRF also includes an extensive data base of device models for ADI’s RF and mixed signal components.

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S-Parameter 1

Sys-Parameter Models for Keysight Genesys

Sys-Parameter models contain behavioral parameters, such as P1dB, IP3, gain, noise figure and return loss, which describe nonlinear and linear characteristics of a device.

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