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HMC451LP3

PRODUCTION

GaAs pHEMT MMIC Medium Power Amplifier, 5 - 18 GHz

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Overview

  • Gain: 18 dB
  • Saturated Power: +21 dBm @ 18% PAE
  • Output IP 3: +28 dBm
  • Single Supply: +5V @ 120 mA
  • 50 Ω Matched Input/Output
  • 16 Lead 3x3mm SMT Package: 9mm2

The HMC451LP3(E) is an efficient GaAs pHEMT MMIC Medium Power Amplifier housed in a leadless RoHS compliant SMT package. Operating between 5 and 18 GHz, the amplifier provides 18 dB of gain, +21 dBm of saturated power and 18% PAE from a single +5V supply. This 50 Ω matched amplifier does not require any external components and the RF I/O’s are DC blocked, making it an ideal linear gain block or LO driver for HMC mixers. The HMC451LP3(E) eliminates the need for wire bonding, and allows the use of surface mount manufacturing techniques.

Applications

  • Microwave Radio & VSAT
  • Military & Space
  • Test Equipment & Sensors
  • Fiber Optics
  • LO Driver for HMC Mixers

HMC451LP3
GaAs pHEMT MMIC Medium Power Amplifier, 5 - 18 GHz
HMC451LP3_fbl
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Documentation

Data Sheet

This is the most up-to-date revision of the Data Sheet.

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Software Resources

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Tools & Simulations

ADIsimRF

ADIsimRF is an easy-to-use RF signal chain calculator. Cascaded gain, noise, distortion and power consumption can be calculated, plotted and exported for signal chains with up to 50 stages. ADIsimRF also includes an extensive data base of device models for ADI’s RF and mixed signal components.

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Sys-Parameter Models for Keysight Genesys

Sys-Parameter models contain behavioral parameters, such as P1dB, IP3, gain, noise figure and return loss, which describe nonlinear and linear characteristics of a device.

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S-Parameter 1


Evaluation Kits

EVAL-HMC451LP3
HMC451LP3 Evaluation Board

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