HMC450

RECOMMENDED FOR NEW DESIGNS

Power Amplifier SMT, 0.8 - 1.0 GHz

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Overview

  • Gain: 26 dB
  • 32% PAE @ 28.5 dBm Output Power
  • +40 dBm Output IP3
  • Integrated Power Control (Vpd)
  • Included in the HMC-DK002 Designer’s Kit

The HMC450QS16G(E) is a high efficiency GaAs InGaP HBT Medium Power MMIC amplifier operating between 800 and 1000 MHz. The amplifier is packaged in a low cost, surface mount 16 lead package and offers the same pinout and functionality as the higher band HMC413QS16G 1.6 - 2.3 GHz PA. With a minimum of external components, the amplifier provides 26 dB of gain, +40 dBm OIP3 and +28.5 dBm of saturated power from a +5V supply voltage. The integrated power control (Vpd) can be used for full power down or RF output power/current control. The combination of high gain and high output IP3 make the HMC450QS16G(E) an ideal linear driver for Cellular, PCS & 3G applications.

Applications

  • GSM, GPRS, & Edge 
  • CDMA & WCDMA 
  • Base Stations & Repeaters

HMC450
Power Amplifier SMT, 0.8 - 1.0 GHz
hmc450qs16g_fbl
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Documentation

Data Sheet

This is the most up-to-date revision of the Data Sheet.

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Software Resources

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Tools & Simulations

ADIsimRF

ADIsimRF is an easy-to-use RF signal chain calculator. Cascaded gain, noise, distortion and power consumption can be calculated, plotted and exported for signal chains with up to 50 stages. ADIsimRF also includes an extensive data base of device models for ADI’s RF and mixed signal components.

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S-Parameter 1

Sys-Parameter Models for Keysight Genesys

Sys-Parameter models contain behavioral parameters, such as P1dB, IP3, gain, noise figure and return loss, which describe nonlinear and linear characteristics of a device.

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Evaluation Kits

EVAL-HMC450QS16G
HMC450QS16G Evaluation Board

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