HMC415

RECOMMENDED FOR NEW DESIGNS

InGaP HBT Power Amplifier SMT, 4.9 - 5.9 GHz

Part Models: 2
1ku List Price: price unavailable

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Overview

Gain: 20 dB
34% PAE @ Psat = +26 dBm
3.7% EVM @ Pout = +15 dBm
with 54 Mbps OFDM Signal
Supply Voltage: +3 V
Power Down Capability
Low External Part Count

The HMC415LP3(E) is a high efficiency GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC Power amplifier which operates between 4.9 and 5.9 GHz. The amplifier is packaged in a low cost, leadless surface mount package with an exposed base for improved RF and thermal performance. With a minimum of external components, the amplifier provides 20 dB of gain, +26 dBm of saturated power, and 34% PAE from a +3V supply voltage. Vpd can be used for full power down or RF output power/current control. For +15 dBm OFDM output power (64 QAM, 54 Mbps), the HMC415LP3(E) achieves an error vector magnitude (EVM) of 3.7% meeting 802.11a linearity requirements.

Applications

802.11a WLAN
HiperLAN WLAN
Access Points
UNII & ISM Radios

Part Models: 2
1ku List Price: price unavailable

Documentation

Data Sheet 1

HMC415 Data Sheet 04/22/2015

Application Note 3

Thermal Management for Surface Mount Components General Application Note 11/11/2015

AN-2591: When It Comes to Long-Term Reliability of RF Amplifier ICs, Focus First on Die Junction Temperature 08/05/2024

AN-1604: Thermal Management Calculations for RF Amplifiers in LFCSP and Flange Packages 08/01/2019

ADI has always placed the highest emphasis on delivering products that meet the maximum levels of quality and reliability. We achieve this by incorporating quality and reliability checks in every scope of product and process design, and in the manufacturing process as well. "Zero defects" for shipped products is always our goal. View our quality and reliability program and certifications for more information.

Part Model	Pin/Package Drawing	Documentation	CAD Symbols, Footprints, and 3D Models
HMC415LP3E	16-Lead QFN (3mm x 3mm w/ EP)	Material Declaration Reliablity Data Package Resources	Ultra Librarian SamacSys
HMC415LP3ETR	16-Lead QFN (3mm x 3mm w/ EP)	Material Declaration Reliablity Data Package Resources	Ultra Librarian SamacSys

Part Models	Product Lifecycle	PCN

Apr 19, 2022 - 22_0048 Addition of ASE Korea as an Alternate Assembly Site for Select LFCSP Products
		PCN22_0048_Form Material_Report Qualification Results Summary Detailed Change Description
HMC415LP3E	LAST TIME BUY
HMC415LP3ETR	LAST TIME BUY
Sep 29, 2025 - 25_0079 Obsolescence of GCS P1HBT Process
		PDN25_0079_Form Material_Report
HMC415LP3E	LAST TIME BUY
HMC415LP3ETR	LAST TIME BUY

This is the most up-to-date revision of the Data Sheet.

Software Resources

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Tools & Simulations

ADIsimRF

ADIsimRF is an easy-to-use RF signal chain calculator. Cascaded gain, noise, distortion and power consumption can be calculated, plotted and exported for signal chains with up to 50 stages. ADIsimRF also includes an extensive data base of device models for ADI’s RF and mixed signal components.

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S-Parameter 1

HMC415 S-Parameters

Sys-Parameter Models for Keysight Genesys

Sys-Parameter models contain behavioral parameters, such as P1dB, IP3, gain, noise figure and return loss, which describe nonlinear and linear characteristics of a device.

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