HMC349AMS8G

PRODUCTION

High Isolation, Nonreflective, GaAs, SPDT Switch,100 MHz to 4 GHz

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Overview

  • Nonreflective, 50 Ω design 
  • High isolation: 57 dB to 2 GHz 
  • Low insertion loss: 0.9 dB to 2 GHz
  • High input linearity
    • 1 dB power compression (P1dB): 34 dBm typical 
    • Third-order intercept (IP3): 52 dBm typical
  • High power handling
    • 33.5 dBm through path
    • 26.5 dBm terminated path
  • Single positive supply: 3 V to 5 V
  • CMOS-/TTL-compatible control
  • All off state control
  • 8-lead mini small outline package with exposed pad (MINI_SO_EP)

The HMC349AMS8G is a gallium arsenide (GaAs), pseudo-morphic high electron mobility transistor (PHEMT), single-pole, double throw (SPDT) switch specified from 100 MHz to 4 GHz.

The HMC349AMS8G is well suited for cellular infrastructure applications by yielding high isolation of 57 dB, low insertion loss of 0.9 dB, high input IP3 of 52 dBm, and high input P1dB of 34 dBm.

The HMC349AMS8G operates with a single positive supply voltage from 3 V to 5 V and provides a CMOS-/TTL-compatible control interface.

The HMC349AMS8G comes in an 8-lead mini small outline package with an exposed pad.

Applications

  • Cellular/4G infrastructure
  • Wireless infrastructure
  • Mobile radios
  • Test equipment

HMC349AMS8G
High Isolation, Nonreflective, GaAs, SPDT Switch,100 MHz to 4 GHz
HMC349AMS8G Functional Block Diagram HMC349AMS8G Pin Configuration
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Software Resources

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Hardware Ecosystem

Parts Product Life Cycle Description
HMC8038 RECOMMENDED FOR NEW DESIGNS

High Isolation, Silicon SPDT, Nonreflective Switch, 0.1 GHz to 6.0 GHz

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Tools & Simulations

ADIsimRF

ADIsimRF is an easy-to-use RF signal chain calculator. Cascaded gain, noise, distortion and power consumption can be calculated, plotted and exported for signal chains with up to 50 stages. ADIsimRF also includes an extensive data base of device models for ADI’s RF and mixed signal components.

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S-Parameter 1


Evaluation Kits

EVAL-HMC349AMS8G
HMC349AMS8G Evaluation Board

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