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Features
- P1dB Output Power: 12.5 dBm
- Psat Output Power: 17.5 dBm
- Gain: 14.5 dB
- Output IP3: 23 dBm
- Supply Voltage: +5 V@80 mA
- 50 Ω Matched Input/Output
- Die Size: 2.7 × 1.45 × 0.1 mm
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The HMC1127 is a GaAs pHEMT MMIC Distributed Power Amplifier which operates between 2 and 50 GHz. The amplifier provides 14.5 dB of gain, 23 dBm output IP3 and 12.5 dBm of output power at 1 dB gain compression while requiring 80 mA from a +5V supply. The HMC1127 amplifier I/Os are internally matched to 50 Ω facilitating integration into Multi-Chip-Modules (MCMs). All data is taken with the chip connected via two 0.025 mm (1 mil) wire bonds of minimal length 0.31 mm (12 mils).
APPLICATIONS
- Test Instrumentation
- Microwave Radio & VSAT
- Military & Space
- Telecom Infrastructure
- Fiber Optics
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HMC1127
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| Part Model | Pin/Package Drawing | Documentation | CAD Symbols, Footprints, and 3D Models |
|---|---|---|---|
| HMC1127 | CHIPS OR DIE |
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| HMC1127-SX | CHIPS OR DIE |
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