HMC1126-Die

RECOMMENDED FOR NEW DESIGNS

GaAs, pHEMT, MMIC, Power Amplifier, 2 GHz to 50 GHz

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Overview

  • Output power for 1 dB compression (P1dB): 17.5 dB typical
  • Saturated output power (PSAT): 21 dBm typical
  • Gain: 11 dB typical
  • Output third-order intercept (IP3): 28 dBm typical
  • Supply voltage: 5 V at 65 mA
  • 50 Ω matched input/output
  • Die size: 2.3 mm × 1.45 mm × 0.05 mm

The HMC1126 is a gallium arsenide (GaAs), pseudomorphic high electron mobility transfer (pHEMT), monolithic microwave integrated circuit (MMIC), distributed power amplifier that operates from 2 GHz to 50 GHz. The HMC1126 provides 11 dB of gain, 28 dBm output IP3, and 17.5 dBm of output power at 1 dB gain compression, while requiring 65 mA from a 5 V supply.

The HMC1126 amplifier inputs/outputs are internally matched to 50 Ω facilitating integration into multichip modules (MCMs). All data is taken with the chip connected via two 0.025 mm (1 mil) wire bonds of minimal length 0.31 mm (12 mils).

APPLICATIONS

  • Test instrumentation
  • Microwave radios and VSATs
  • Military and space
  • Telecommunications infrastructure
  • Fiber optics
  • HMC1126-Die
    GaAs, pHEMT, MMIC, Power Amplifier, 2 GHz to 50 GHz
    HMC1126 Functional Block Diagram HMC1126 Pin Configuration
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