Features and Benefits

  • Output power for 1 dB compression (P1dB): 17.5 dB typical
  • Saturated output power (PSAT): 21 dBm typical
  • Gain: 11 dB typical
  • Output third-order intercept (IP3): 28 dBm typical
  • Supply voltage: 5 V at 65 mA
  • 50 Ω matched input/output
  • Die size: 2.3 mm × 1.45 mm × 0.05 mm

Product Details

The HMC1126 is a gallium arsenide (GaAs), pseudomorphic high electron mobility transfer (pHEMT), monolithic microwave integrated circuit (MMIC), distributed power amplifier that operates from 2 GHz to 50 GHz. The HMC1126 provides 11 dB of gain, 28 dBm output IP3, and 17.5 dBm of output power at 1 dB gain compression, while requiring 65 mA from a 5 V supply.

The HMC1126 amplifier inputs/outputs are internally matched to 50 Ω facilitating integration into multichip modules (MCMs). All data is taken with the chip connected via two 0.025 mm (1 mil) wire bonds of minimal length 0.31 mm (12 mils).


  • Test instrumentation
  • Microwave radios and VSATs
  • Military and space
  • Telecommunications infrastructure
  • Fiber optics
  • Product Lifecycle icon-recommended Recommended for New Designs

    This product has been released to the market. The data sheet contains all final specifications and operating conditions. For new designs, ADI recommends utilization of these products.

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