HMC-AUH249-DIE

NOT RECOMMENDED FOR NEW DESIGNS

Modulator Driver Amplifier Chip, DC - 35 GHz

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Overview

  • Small Signal Gain: 15 dB
  • Output Voltage: up to 8V pk-pk
  • Psat Output Power: +23 dBm
  • High Speed Performance: >35 GHz 3 dB Bandwidth
  • Supply Voltage: +5V @ 200 mA
  • Small Die Size:
    2.2 x 1.80 x 0.1 mm

The HMC-AUH249 is a GaAs MMIC HEMT Distributed Driver Amplifier die which operates between DC and 43 GHz and provides a typical 3 dB bandwidth of 35 GHz. The amplifier provides 15 dB of gain and +23 dBm of saturated output power while requiring only 200 mA from a +5V supply voltage.

The HMC-AUH249 exhibits very good gain and phase ripple beyond 25 GHz and can output greater than 8V peak-to-peak, making it ideal for for use in broadband wireless, fiber optic communication and test equipment applications. The amplifier die occupies less than 4 mm² which facilitates easy integration into Multi-Chip-Modules (MCMs). The HMC-AUH249 requires a bias-tee as well as off-chip blocking components and bypass capacitors for the DC supply lines. Vgg1 adjusts the bias current for the device while Vgg2 adjusts the output gain.

Applications

  • Fiber Optic Modulator Driver
  • Gain Block for Test & Measurement Equipment
  • Point-to-Point / Point-to-Multi-Point Radios
  • Wideband Communication & Surveillance Systems
  • Radar Warning Systems
  • Military & Space
HMC-AUH249-DIE
Modulator Driver Amplifier Chip, DC - 35 GHz
hmc-auh249_fbl
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Documentation

Data Sheet 1

Application Note 5

Technical Articles 1

Data Sheet

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Tools & Simulations

ADIsimRF

ADIsimRF is an easy-to-use RF signal chain calculator. Cascaded gain, noise, distortion and power consumption can be calculated, plotted and exported for signal chains with up to 50 stages. ADIsimRF also includes an extensive data base of device models for ADI’s RF and mixed signal components.

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Sys-Parameter Models for Keysight Genesys

Sys-Parameter models contain behavioral parameters, such as P1dB, IP3, gain, noise figure and return loss, which describe nonlinear and linear characteristics of a device.

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S-Parameter 1

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