HMC-APH608-DIE

Obsolete

1 Watt Power Amplifier Chip, 22.5 - 26.5 GHz

Data Sheet Product Selection Table
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Overview

  • Output IP3: +40 dBm
  • P1dB: +30 dBm
  • Gain: 17 dB
  • Supply Voltage: +5V
  • 50 Ohm Matched Input/Output
  • Die Size: 4.49 x 1.31 x 0.1 mm

The HMC-APH608 is a high dynamic range, two stage GaAs HEMT MMIC 1 Watt Power Amplifier which operates between 22.5 and 26.5 GHz. The HMCAPH608 provides 17 dB of gain, and an output power of +30 dBm at 1 dB compression from a +5V supply voltage. All bond pads and the die backside are Ti/Au metallized and the amplifier device is fully passivated for reliable operation.

The HMC-APH608 GaAs HEMT MMIC 1 Watt Power Amplifier is compatible with conventional die attach methods, as well as thermocompression and thermosonic wire bonding, making it ideal for MCM and hybrid microcircuit applications. All data Shown herein is measured with the chip in a 50 Ohm environment and contacted with RF probes.

Applications

  • Point-to-Point Radios
  • Point-to-Multi-Point Radios
  • VSAT
  • Military & Space

Alternative Part 2

HMC994A-DIE

GaAs pHEMT MMIC 0.5 Watt Power Amplifier, DC - 30 GHz

HMC906A-DIE

GaAs pHEMT MMIC 2 Watt Power Amplifier, 27.3 - 33.5 GHz

HMC-APH608-DIE
1 Watt Power Amplifier Chip, 22.5 - 26.5 GHz
hmc-aph608_fbl
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Documentation

Data Sheet 1

Application Note 4

Technical Articles 1

Data Sheet

This is the most up-to-date revision of the Data Sheet.

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Software Resources

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Hardware Ecosystem

Parts Product Life Cycle Description
HMC994A-DIE
GaAs pHEMT MMIC 0.5 Watt Power Amplifier, DC - 30 GHz
HMC906A-DIE
NOT RECOMMENDED FOR NEW DESIGNS GaAs pHEMT MMIC 2 Watt Power Amplifier, 27.3 - 33.5 GHz
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Tools & Simulations

ADIsimRF

ADIsimRF is an easy-to-use RF signal chain calculator. Cascaded gain, noise, distortion and power consumption can be calculated, plotted and exported for signal chains with up to 50 stages. ADIsimRF also includes an extensive data base of device models for ADI’s RF and mixed signal components.

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Sys-Parameter Models for Keysight Genesys

Sys-Parameter models contain behavioral parameters, such as P1dB, IP3, gain, noise figure and return loss, which describe nonlinear and linear characteristics of a device.

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