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HMC-ALH382-DIE

RECOMMENDED FOR NEW DESIGNS

Low Noise Amplifier Chip, 57 - 65 GHz

Data Sheet Product Selection Table
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Overview

  • Noise Figure: 3.8 dB
  • P1dB: +12 dBm
  • Gain: 21 dB
  • Supply Voltage: +2.5V
  • 50 Ohm Matched Input/Output
  • Die Size: 1.55 x 0.73 x 0.1 mm

The HMC-ALH382 is a high dynamic range, four stage GaAs HEMT MMIC Low Noise Amplifier (LNA) which operates between 57 and 65 GHz. The HMC-ALH382 features 21 dB of small signal gain, 4 dB of noise figure and an output power of +12 dBm at 1dB compression from a +2.5V supply voltage. All bond pads and the die backside are Ti/Au metallized and the amplifier device is fully passivated for reliable operation.

This versatile LNA is compatible with conventional die attach methods, as well as thermocompression thermosonic wirebonding, making it ideal for MCM and hybrid microcircuit applications. All data shown herein is measured with the chip in a 50 Ohm environment and contacted with RF probes.

Applications

  • Short Haul / High Capacity Links
  • Wireless LANs
  • Military & Space
HMC-ALH382-DIE

Low Noise Amplifier Chip, 57 - 65 GHz

hmc-alh382_fbl
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Documentation

Data Sheet 1

Application Note 5

Technical Articles 2

Data Sheet

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Software Resources

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Tools & Simulations

ADIsimRF

ADIsimRF is an easy-to-use RF signal chain calculator. Cascaded gain, noise, distortion and power consumption can be calculated, plotted and exported for signal chains with up to 50 stages. ADIsimRF also includes an extensive data base of device models for ADI’s RF and mixed signal components.

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S-Parameter 1

Sys-Parameter Models for Keysight Genesys

Sys-Parameter models contain behavioral parameters, such as P1dB, IP3, gain, noise figure and return loss, which describe nonlinear and linear characteristics of a device.

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