HMC-ALH102-DIE

Wideband Low Noise Amplifier Chip, 2 - 20 GHz


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Overview

  • Noise Figure: <2.5 dB
  • Gain: 11.6 dB @ 10 GHz
  • P1dB Output Power: +10 dBm
  • Supply Voltage: +2V @ 55 mA
  • Die Size: 3.0 x 1.435 x 0.1 mm

The HMC-ALH102 is a GaAs MMIC HEMT Low Noise Distributed Amplifier die which operates between 2 and 20 GHz. The amplifier provides 11.6 dB of gain at 10 GHz, <3.5 dB noise figure and +10 dBm of output power at 1 dB gain compression while requiring only 55 mA from a +2V supply voltage. The HMC-ALH102 amplifier is ideal for integration into Multi-Chip-Modules (MCMs) due to its small size.

Applications

  • Wideband Communications Receivers
  • Surveillance Systems
  • Point-to-Point Radios
  • Point-to-Multi-Point Radios
  • Military & Space
  • Test Instrumentation

HMC-ALH102-DIE
Wideband Low Noise Amplifier Chip, 2 - 20 GHz

hmc-alh102_fbl
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Tools & Simulations

ADIsimRF

ADIsimRF is an easy-to-use RF signal chain calculator. Cascaded gain, noise, distortion and power consumption can be calculated, plotted and exported for signal chains with up to 50 stages. ADIsimRF also includes an extensive data base of device models for ADI’s RF and mixed signal components.

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S-Parameter 1

Sys-Parameter Models for Keysight Genesys

Sys-Parameter models contain behavioral parameters, such as P1dB, IP3, gain, noise figure and return loss, which describe nonlinear and linear characteristics of a device.

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