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  6. ADRF5519

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Overview

Features and Benefits

  • Integrated dual-channel RF front end
    • 2-stage LNA and high power silicon SPDT switch
    • On-chip bias and matching
    • Single-supply operation
  • High power handling at TCASE = 105°C
    • LTE average power (9 dB PAR) full lifetime: 43 dBm
  • Gain
    • High gain mode: 35 dB typical at 2.6 GHz
    • Low gain mode: 14 dB typical at 2.6 GHz
  • Low noise figure
    • High gain mode: 1.0 dB typical at 2.6 GHz
    • Low gain mode: 1.0 dB typical at 2.6 GHz
  • High isolation
    • RXOUT-CHA and RXOUT-CHB: 45 dB typical
    • TERM-CHA and TERM-CHB: 60 dB typical
  • Low insertion loss: 0.5 dB typical at 2.6 GHz
  • High OIP3: 32 dBm typical
  • Power-down mode and low gain mode
  • Low supply current
    • High gain mode: 110 mA typical at 5 V
    • Low gain mode: 36 mA typical at 5 V
    • Power-down mode: 12 mA typical at 5 V
  • Positive logic control
  • 6 mm × 6 mm, 40-lead LFCSP package
  • Pin compatible with the ADRF5545A and ADRF5549 10 W versions

Product Details

The ADRF5519 is a dual-channel, integrated RF, front-end multichip module designed for time division duplexing (TDD) applications that operates from 2.3 GHz to 2.8 GHz. The ADRF5519 is configured in dual channels with a cascading two stage low noise amplifier (LNA) and a high power silicon single pole, double-throw (SPDT) switch.

In high gain mode, the cascaded two-stage LNA and switch offer a low noise figure (NF) of 1.0 dB and a high gain of 35 dB at 2.6 GHz with an output third-order intercept point (OIP3) of 32 dBm (typical). In low gain mode, one stage of the two-stage LNA is in bypass, providing 14 dB of gain at a lower current of 36 mA. In power-down mode, the LNAs are turned off and the device draws 12 mA.

In transmit operation, RF inputs are connected to a termination pin (ANT-CHA or ANT-CHB connected to TERM-CHA or TERM-CHB, respectively). The switch provides a low insertion loss of 0.5 dB and handles a long-term evolution (LTE) average power (9 dB peak to average ratio (PAR)) of 43 dBm for full lifetime operation.

The device comes in a RoHS-compliant, compact, 6 mm × 6 mm, 40-lead LFCSP package.

APPLICATIONS

  • Wireless infrastructure
  • TDD massive multiple input and multiple output and active antenna systems
  • TDD-based communication systems

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    Design Resources

    ADI has always placed the highest emphasis on delivering products that meet the maximum levels of quality and reliability. We achieve this by incorporating quality and reliability checks in every scope of product and process design, and in the manufacturing process as well.  "Zero defects" for shipped products is always our goal.View our quality and reliability program and certifications for more information.

    Part Number Material Declaration Reliability Data Pin/Package Drawing CAD Symbols, Footprints & 3D Models
    ADRF5519BCPZN Material Declaration Reliability Data 40-Lead LFCSP (6mm x 6mm w/ EP)
    ADRF5519BCPZN-R7 Material Declaration Reliability Data 40-Lead LFCSP (6mm x 6mm w/ EP)
    ADRF5519BCPZN-RL Material Declaration Reliability Data 40-Lead LFCSP (6mm x 6mm w/ EP)
    Wafer Fabrication Data

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