Overview

Features and Benefits

  • Reflective design
  • Low insertion loss: 1.1 dB
  • High isolation: 38 dB
  • High input linearity
    • P0.1dB: 37 dBm
    • IP3: 65 dBm 
  • RF settling time (0.1 dB final RF output): 70 ns
  • High RF power handling
    • 28 dBm average
    • 36 dBm peak
  • 3.3 V single-supply operation
    • Internal negative voltage generator
  • 20-terminal, 3 mm × 3 mm, RoHS-compliant, land grid array package

Product Details

The ADRF5300 is a reflective, SPDT switch manufactured in the silicon process.

The ADRF5300 is developed for 5G applications ranging from 24 GHz to 32 GHz. The ADRF5300 has a low insertion loss of 1.1 dB, a high isolation of 38 dB, and an RF input power handling capability of 28 dBm average and 36 dBm peak.

The ADRF5300 incorporates a negative voltage generator (NVG) to operate with a single positive supply of 3.3 V (VDD) applied to the VDD pin. The device employs CMOS- and low voltage transistor to transistor logic (LVTTL)-compatible controls.

The ADRF5300 is packaged in a 20-terminal, 3 mm × 3 mm, RoHS-compliant, land grid array (LGA) package and can operate from −40°C to +105°C.

APPLICATIONS

  • Industrial scanner
  • Test instrumentation
  • Cellular infrastructure: 5G millimeter wave
  • Military radios, radars, electronic counter measures (ECMs)
  • Microwave radios and very small aperture terminals (VSATs)

Product Lifecycle icon-recommended Recommended for New Designs

This product has been released to the market. The data sheet contains all final specifications and operating conditions. For new designs, ADI recommends utilization of these products.

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Pricing displayed is based on 1-piece. The USA list pricing shown is for budgetary use only, shown in United States dollars (FOB USA per unit), and is subject to change. International prices may vary due to local duties, taxes, fees and exchange rates.