ADRF5030

RECOMMENDED FOR NEW DESIGNS

100 MHz to 20 GHz, Non-Reflective, Silicon SPDT Switch

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Overview

  • Wideband frequency range, 100 MHz to 20 GHz
  • Non-reflective design
  • Low insertion loss
    • 0.7 dB typical between 0.1 GHz to 6 GHz
    • 0.9 dB typical between 6 GHz to 12 GHz
    • 1.2 dB typical up to 20 GHz
  • High isolation
    • 55 dB typical between 100 MHz to 6 GHz
    • 50 dB typical between 6 GHz to 12 GHz
    • 45 dB typical up to 20 GHz/li>
  • High input linearity
    • P0.1dB: >36 dBm typical
    • IP3: 60 dBm typical
  • High RF power handling
    • Through path: 36 dBm peak / 33 dBm avg
    • Terminated Path: 36 dBm peak / 33 dBm avg
    • Hot switching path: 36 dBm peak /33 dBm avg
  • CMOS/LVTTL compatible
  • No low-frequency spur; No negative voltage generator
  • Fast RF switching time: 70 ns
  • RF settling time (0.1 dB): 95 ns
  • Single-supply operation capability (VDD = 3.3 V, VSS = 0 V)
  • 20-terminal, 3 mm x 3 mm LGA package
  • Pin Compatible with ADRF5022 & ADRF5026

The ADRF5030 is a non-reflective, single-pole double-throw (SPDT) switch manufactured using the silicon on insulator (SOI) process. The ADRF5030 operates from 100 MHz to 20 GHz with insertion loss of lower than 1.2 dB and isolation of higher than 45 dB. The device has an RF input power handling capability of 33 dBm average/36 dBm peak for both RFC and RFx through paths, termination paths, and hot switching for both RFC and RFx ports. The ADRF5030 operates with dual-supply voltages of ±3.3 V. The ADRF5030 employs complementary metal-oxide semiconductor (CMOS) and low-voltage transistor to transistor logic (LVTTL)-compatible control.

The ADRF5030 can also operate with a single positive supply voltage (VDD) applied while the negative supply voltage (VSS) is tied to ground. In this operating condition, the small signal performance is maintained while the switching characteristics, linearity, and power handling performance are derated. See Table 2 for more details.

The ADRF5030 is pin compatible with the ADRF5022 and ADRF5026, and also pin compatible with ADRF5031, a slow-switching, low cut-off version, which operates between 9 kHz to 20 GHz.

The ADRF5030 is packaged in a 20-terminal, 3 mm × 3 mm, RoHS-compliant, land grid array (LGA). The ADRF5030 operates from −40°C to +105°C.

APPLICATIONS

  • Test instrumentation
  • Military radios, radars, electronic counter measures (ECMs)
  • Microwave radios and very small aperture terminals (VSATs)

ADRF5030
100 MHz to 20 GHz, Non-Reflective, Silicon SPDT Switch
ADRF5030 Functional Block Diagram ADRF5030  Pin Configuration
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Software Resources

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Hardware Ecosystem

Parts Product Life Cycle Description
ADRF5023 RECOMMENDED FOR NEW DESIGNS Silicon SPDT Switch, Nonreflective , 9 kHz to 45 GHz
ADRF5027 RECOMMENDED FOR NEW DESIGNS Silicon SPDT Switch, Nonreflective, 9 kHz to 44 GHz
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Tools & Simulations


Evaluation Kits

eval board
EVAL-ADRF5030

Evaluating the ADRF5030 Silicon SPDT Switch, Non-Reflective, 100 MHz to 20 GHz

Features and Benefits

  • Full-featured evaluation board for the ADRF5030 
  • Easy connection to the test equipment
  • Thru line for calibration

Product Details

The ADRF5030 is a single-pole, double-throw (SPDT) switch manufactured in the silicon process.

This user guide describes the ADRF5030-EVALZ evaluation board, designed to evaluate the features and performance of the ADRF5030. Figure 1 shows a photograph of the evaluation board.

Full specifications on the ADRF5030 are available in the ADRF5030 data sheet from Analog Devices. Consult it with this user guide when using the ADRF5030-EVALZ evaluation board.

EVAL-ADRF5030
Evaluating the ADRF5030 Silicon SPDT Switch, Non-Reflective, 100 MHz to 20 GHz
ADRF5023 Evaluation Board - Angle ADRF5023 Evaluation Board - Top ADRF5023 Evaluation Board - Bottom

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