Features and Benefits
- Output P1dB: 28.5 dBm typical at 24 GHz to 36 GHz
- PSAT: 29 dBm typical at 24 GHz to 36 GHz
- Gain: 19.5 dB typical at 24 GHz to 36 GHz
- Input return loss: 17.5 dB typical at 24 GHz to 36 GHz
- Output return loss: 22.0 dB typical at 24 GHz to 36 GHz
- Output IP3: 35 dBm typical at 24 GHz to 36 GHz
- Supply voltage: 5 V typical at 750 mA
- 50 Ω matched input and output
- Die size: 2.750 mm × 1.845 mm× 0.102 mm
The ADPA7009CHIP is a gallium arsenide (GaAs), pseudomorphic high electron mobility transistor (pHEMT), monolithic microwave integrated circuit (MMIC), 29 dBm saturated output power (0.5 W) distributed power amplifier that operates from 20 GHz to 54 GHz. The amplifier provides a gain of 19.5 dB, an output power for 1 dB compression (P1dB) of 28.5 dBm, and a typical output third-order intercept (IP3) of 35 dBm at 24 GHz to 36 GHz. The ADPA7009CHIP requires 750 mA from a 5 V supply voltage (VDD) and features inputs and outputs that are internally matched to 50 Ω, facilitating integration into multichip modules (MCMs). All data is taken with the RFIN and RFOUT pads connected via one 0.076 mm (3 mil) ribbon bond of 0.076 mm (3 mil) minimal length.
- Military and space
- Test instrumentation
- Satellite communications
Markets and Technologies
Product Lifecycle Recommended for New Designs
This product has been released to the market. The data sheet contains all final specifications and operating conditions. For new designs, ADI recommends utilization of these products.
Documentation & Resources
RF, Microwave, and Millimeter Wave Product Selection Guide7/13/20189M
Tools & Simulations
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|ADPA7009C-KIT||Material Declaration||Reliability Data||CHIPS OR DIE|
|ADPA7009CHIP||Material Declaration||Reliability Data||CHIPS OR DIE|
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