ADPA7009
Info : RECOMMENDED FOR NEW DESIGNS
searchIcon
cartIcon

ADPA7009

20 GHz to 54 GHz, GaAs, pHEMT, MMIC, 29 dBm (0.5 W) Power Amplifier

Show More showmore-icon

Info : RECOMMENDED FOR NEW DESIGNS tooltip
Info : RECOMMENDED FOR NEW DESIGNS tooltip
Part Details
Part Models 2
1ku List Price Starting From $204.42
Features
  • Output P1dB: 28.5 dBm typical at 24 GHz to 36 GHz
  • PSAT: 29 dBm typical at 24 GHz to 36 GHz
  • Gain: 19.5 dB typical at 24 GHz to 36 GHz
  • Input return loss: 17.5 dB typical at 24 GHz to 36 GHz
  • Output return loss: 22.0 dB typical at 24 GHz to 36 GHz
  • Output IP3: 35 dBm typical at 24 GHz to 36 GHz
  • Supply voltage: 5 V typical at 750 mA
  • 50 Ω matched input and output
  • Die size: 2.750 mm × 1.845 mm× 0.102 mm
Additional Details
show more Icon

The ADPA7009CHIP is a gallium arsenide (GaAs), pseudomorphic high electron mobility transistor (pHEMT), monolithic microwave integrated circuit (MMIC), 29 dBm saturated output power (0.5 W) distributed power amplifier that operates from 20 GHz to 54 GHz. The amplifier provides a gain of 19.5 dB, an output power for 1 dB compression (P1dB) of 28.5 dBm, and a typical output third-order intercept (IP3) of 35 dBm at 24 GHz to 36 GHz. The ADPA7009CHIP requires 750 mA from a 5 V supply voltage (VDD) and features inputs and outputs that are internally matched to 50 Ω, facilitating integration into multichip modules (MCMs). All data is taken with the RFIN and RFOUT pads connected via one 0.076 mm (3 mil) ribbon bond of 0.076 mm (3 mil) minimal length.

APPLICATIONS

  • Military and space
  • Test instrumentation
  • Satellite communications
Part Models 2
1ku List Price Starting From $204.42

close icon
Documentation

Documentation

Part Model Pin/Package Drawing Documentation CAD Symbols, Footprints, and 3D Models
ADPA7009C-KIT
  • HTML
  • HTML
ADPA7009CHIP
  • HTML
  • HTML
Software & Part Ecosystem

Software & Part Ecosystem

Recently Viewed