ADMV7710
Info : RECOMMENDED FOR NEW DESIGNS
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ADMV7710

71 GHz to 76 GHz, 1 Watt E-Band Power Amplifier With Power Detector

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Info : RECOMMENDED FOR NEW DESIGNS tooltip
Info : RECOMMENDED FOR NEW DESIGNS tooltip
Part Details
Part Models 2
1ku List Price Starting From $148.29
Features
  • Gain: 24 dB typical
  • Output power for 1 dB compression: 28 dBm typical
  • Saturated output power: 29 dBm typical
  • Output third-order intercept: 34 dBm typical
  • Input return loss: 18 dB typical
  • Output return loss: 10 dB typical
  • DC supply: 4 V at 800 mA
  • No external matching required
  • Die size: 2.999 mm × 3.999 mm × 0.05 mm
Additional Details
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The ADMV7710 is an integrated, E-band, gallium arsenide (GaAs), pseudomorphic, high electron mobility tranfer (pHEMT), monolithic microwave integrated circuit (MMIC), medium power amplifier with an on-chip, temperature compensated power detector that operates from 71 GHz to 76 GHz. The ADMV7710 provides 24 dB of gain, 28 dBm of output power at 1 dB compression, and 29 dBm of saturated output power at 20% power added efficiency from a 4 V power supply. The ADMV7710 exhibits excellent linearity and is optimized for E-band communications and high capacity, wireless backhaul radio systems. The amplifier configuration and high gain make the device an excellent candidate for last stage signal amplification before the antenna. All data is taken with the chip in a 50 Ω test fixture connected via a 3 mil wide × 0.5 mil thick × 7 mil long ribbon on each port. The ADMV7710 is available in a 40-pad bare die (CHIP) and operates over the −55°C to +85°C temperature range.

Applications

  • E-band communication systems
  • High capacity wireless backhaul radio systems
  • Test and measurement
Part Models 2
1ku List Price Starting From $148.29

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Documentation

Documentation

Part Model Pin/Package Drawing Documentation CAD Symbols, Footprints, and 3D Models
ADMV7710-SX
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ADMV7710CHIPS
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Software & Part Ecosystem

Software & Part Ecosystem

Tools & Simulations

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