ADL9006S

PRODUCTION

Aerospace, GaAs, pHEMT, MMIC, Low Noise Amplifier, 2 GHz to 28 GHz

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Overview

  • OP1dB: +20 dBm Typical from 2 GHz to 6 GHz
  • PSAT: +20.5 dBm Typical from 2 GHz to 6 GHz
  • Gain: 15.5 dB Typical from 6 GHz to 28 GHz
  • Noise Figure: 2.5 dB Typical from 2 GHz to 20 GHz
  • OIP3: +26 dBm Typical from 2 GHz to 6 GHz
  • Supply Voltage: +5 V @ 53 mA
  • 50 Ω matched Input and Output
  • 32-Lead 5 mm x 5 mm LFCSP_CAV package
  • Screened to ADI Commercial Space Products Program, Commercial Space High (CSH) grade.

The ADL9006S is a gallium arsenide (GaAs), pseudomorphic high electron mobility transistor (pHEMT), monolithic microwave integrated circuit (MMIC), low noise amplifier that operates between 2 GHz and 28 GHz. The amplifier provides 15.5 dB of gain, 2.5 dB noise figure, 26 dBm output third-order intercept (OIP3), and 20 dBm of output power for 1 dB compression (OP1dB) while requiring 53 mA from a 5 V supply. The ADL9006S is self-biased with only a single positive supply needed to achieve a supply current (IDD) of 53 mA.

The ADL9006S amplifier input and output are internally matched to 50 Ω.

Applications

  • Local Oscillator Driver Amp
  • Signals Intelligence
  • Military & Space
ADL9006S
Aerospace, GaAs, pHEMT, MMIC, Low Noise Amplifier, 2 GHz to 28 GHz
HMC8841ACGZN SID
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Documentation

Application Note 1

Controlled Drawings 1

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