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  2. Amplifiers
  3. RF Amplifiers
  4. Low Noise Amplifiers
  5. ADL8142-2


Features and Benefits

  • Low noise figure: 1.8 dB typical at 27 GHz to 31 GHz
  • Single positive supply (self biased)
  • High gain: 26.5 dB typical at 27 GHz to 31 GHz
  • High OIP3: 20 dBm typical at 27 GHz to 31 GHz
  • Die size: 0.945 mm × 1.015 mm × 0.100 mm
Commercial Space Features
  • Wafer diffusion lot traceability
  • Radiation benchmark
  • Total ionizing dose (TID): 30 krads
  • Single event latchup (SEL): ≥ 62.4 MeV-cm2/mg

Product Details

For more information on the ADL8142-2C-CSL, please refer to the corresponding data sheet.


The ADL8142-2CHIP is a gallium arsenide (GaAs), monolithic microwave integrated circuit (MMIC), pseudomorphic high electron mobility transistor (pHEMT), low noise wideband amplifier that operates from 23 GHz to 31 GHz. The ADL8142-2CHIP provides a typical gain of 26.5 dB, a 1.8 dB typical noise figure, and a typical output third-order intercept (OIP3) of 20 dBm at 27 GHz to 31 GHz, requiring only 25 mA from a 2 V supply voltage. Note that the OIP3 can be improved with larger drain currents. The ADL8142-2CHIP also features inputs and outputs that are ac-coupled and internally matched to 50 Ω, making it ideal for high capacity microwave radio applications.


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    Part Number Material Declaration Reliability Data Pin/Package Drawing CAD Symbols, Footprints & 3D Models
    ADL8142-2C-CSL Material Declaration Reliability Data CHIPS OR DIE
    ADL8142-2C-SX Material Declaration Reliability Data CHIPS OR DIE
    ADL8142-2CHIP Material Declaration Reliability Data CHIPS OR DIE
    Wafer Fabrication Data

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