ADL7003
50 GHz to 95 GHz, GaAs, pHEMT, MMIC, Wideband Low Noise Amplifier
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Features
- Gain: 14 dB typical
- Noise figure: 5 dB typical
- Input return loss (S11): 15 dB typical
- Output return loss (S22): 20 dB typical
- Output power for 1 dB compression (P1dB): 14 dBm typical
- Saturated output power (PSAT): 18 dBm typical
- Output third-order intercept (IP3): 21 dBm typical
- Supply voltage: 3 V at 120 mA
- 50 Ω matched input/output
- Die size: 1.9 mm × 1.9 mm × 0.05 mm
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The ADL7003 is a gallium arsenide (GaAs), pseudomorphic high electron mobility transistor (pHEMT), monolithic microwave integrated circuit (MMIC), balanced low noise amplifier that operates from 50 GHz to 95 GHz. In the lower band of 50 GHz to 70 GHz, the ADL7003 provides 14 dB (typical) of gain, 21 dBm output IP3, and 12 dBm of output power for 1 dB gain compression. In the upper band of 70 GHz to 90 GHz, the ADL7003 provides 15 dB (typical) of gain, 21 dBm output IP3, and 14 dBm of output power for1 dB gain compression. The ADL7003 requires 120 mA from a 3 V supply. The ADL7003 amplifier inputs/outputs are internally matched to 50 Ω, facilitating integration into multichip modules (MCMs). All data is taken with the chip connected via one 0.076 mm (3 mil) ribbon bond of 0.076 mm (3 mil) minimal length.
Applications
- Test instrumentation
- Military and space
- Telecommunications infrastructure
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ADL7003
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| Part Model | Pin/Package Drawing | Documentation | CAD Symbols, Footprints, and 3D Models |
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| ADL7003CHIPS | CHIPS OR DIE |
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| ADL7003CHIPS-SX | CHIPS OR DIE |
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