Features and Benefits

  • Low noise figure: 1.1 dB typical
  • High gain: 19.5 dB typical
  • High output third-order intercept (OIP3): 33 dBm typical
  • 50Ω matched DC-coupled I/O
  • Die Size 0.95 mm x 0.61 mm x .102 mm

Product Details

The ADH8410S is a gallium arsenide (GaAs), monolithic microwave integrated circuit (MMIC), pseudomorphic high electron mobility transistor (pHEMT), low noise wideband amplifier that operates from 0.01 GHz to 10 GHz. The ADH8410S provides a typical gain of 19.5 dB, a 1.1 dB typical noise figure, and a typical OIP3 of 33 dBm, requiring only 65 mA from a 5 V supply voltage. The saturated output power (PSAT) of up to 22.5 dBm enables the low noise amplifier (LNA) to function as a local oscillator (LO) driver for many of Analog Devices, Inc., balanced, I/Q or image rejection mixers.

The ADH8410S also features inputs/outputs (I/Os) that are internally matched to 50 Ω, making it ideal for integration into multichip modules (MCMs) supporting high reliability RF and microwave applications.

The ADH8410S is housed in a LH5 package or available as die.


  • Space Telecom
  • Software defined radios
  • Electronics warfare
  • Radar applications

Product Categories

Product Lifecycle icon-recommended Recommended for New Designs

This product has been released to the market. The data sheet contains all final specifications and operating conditions. For new designs, ADI recommends utilization of these products.

Design Resources

ADI has always placed the highest emphasis on delivering products that meet the maximum levels of quality and reliability. We achieve this by incorporating quality and reliability checks in every scope of product and process design, and in the manufacturing process as well.  "Zero defects" for shipped products is always our goal.

Sample & Buy

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