ADH8400S

PRODUCTION

Aerospace, GaAs, pHEMT, MMIC, Low Noise Amplifier, 2 GHz to 30 GHz

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Overview

  • Output power for 1 dB compression (OP1dB): 14.5 dBm Typ
  • Saturated output power (PSAT): 17 dBm Typ
  • Gain: 13.5 dB Typ
  • Noise figure 2 dB
  • Output third order intercept (OIP3): 26.5 dBm Typ
  • Supply voltage: 5 V @ 67 mA
  • 50 Ω matched input/output
  • Die size: 2.720 mm × 1.370 mm × 0.0508 mm
  • Screened in accordance with MIL-PRF-38534, Class K

The ADH8400S is a gallium arsenide (GaAs), pseudomorphic high electron mobility transistor (pHEMT), monolithic microwave integrated circuit (MMIC). The ADH8400S is a wideband low noise amplifier that operates between 2 GHz and 30 GHz. The amplifier provides 13.5 dB of gain, a 2 dB noise figure, and 26.5 dBm OIP3, and 14.5 dBm OP1dB, requiring 67 mA from a 5 V supply. The ADH8400S is self-biased with only a single positive supply needed to achieve a drain current IDD of 67 mA. The ADH8400S also has a gain control option, VGG2. The ADH8400S amplifier input/outputs are internally matched to 50 Ω and dc blocked, facilitating integration into multichip modules (MCMs).

Applications

  • Test instrumentation
  • Microwave radios
  • Telecommunications infrastructure
  • Military and space
ADH8400S
Aerospace, GaAs, pHEMT, MMIC, Low Noise Amplifier, 2 GHz to 30 GHz
HMC8743 SID
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Documentation

Application Note 2

Controlled Drawings 1

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