ADH659S

RECOMMENDED FOR NEW DESIGNS

Aerospace, GaAs, PHEMT, MMIC, Power Amplifier, DC to 15 GHz

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Overview

  • P1dB Output Power: +26.5 dBm
  • Gain: 19 dB
  • OIP3: +35 dBm
  • Single Supply: +8V @ 300 mA
  • 50 Ohm Matched Input/Output
  • Die Size: 3.06 mm x 1.559 mm x 0.1 mm
  • Screened in accordance with MIL-PRF-38534, Class K

The ADH659S is a GaAs MMIC PHEMT Distributed Power Amplifier die which operates between DC and 15 GHz. The amplifier provides 19 dB of gain, +35 dBm output IP3 and +26.5 dBm Output P1dB while requiring 300 mA from a +8V supply. Gain flatness is excellent at ±0.4 dB from DC to 10 GHz making the ADH659S ideal for variety of applications. The ADH659S amplifier I/Os are internally matched to 50 Ohms facilitating integration into Multi-Chip-Modules (MCMs).

Applications

  • Microwave Radios
  • VSAT
  • Test Instrumentation
  • Military and Space
ADH659S
Aerospace, GaAs, PHEMT, MMIC, Power Amplifier, DC to 15 GHz
HMC8418 SID
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Documentation

Application Note 1

Controlled Drawings 1

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