ADH659S
RECOMMENDED FOR NEW DESIGNSDC to 15 GHz Power Amplifier
- Part Models
- 1
- 1ku List Price
- price unavailable
Part Details
- P1dB Output Power: +26.5 dBm
- Gain: 19 dB
- OIP3: +35 dBm
- Single Supply: +8V @ 300 mA
- 50 Ohm Matched Input/Output
- Die Size: 3.06 mm x 1.559 mm x 0.1 mm
- Screened in accordance with MIL-PRF-38534, Class K
The ADH659S is a GaAs MMIC PHEMT Distributed Power Amplifier die which operates between DC and 15 GHz. The amplifier provides 19 dB of gain, +35 dBm output IP3 and +26.5 dBm Output P1dB while requiring 300 mA from a +8V supply. Gain flatness is excellent at ±0.4 dB from DC to 10 GHz making the ADH659S ideal for variety of applications. The ADH659S amplifier I/Os are internally matched to 50 Ohms facilitating integration into Multi-Chip-Modules (MCMs).
Applications
- Microwave Radios
- VSAT
- Test Instrumentation
- Military and Space
Documentation
Controlled Drawings 1
ADI has always placed the highest emphasis on delivering products that meet the maximum levels of quality and reliability. We achieve this by incorporating quality and reliability checks in every scope of product and process design, and in the manufacturing process as well. "Zero defects" for shipped products is always our goal. View our quality and reliability program and certifications for more information.
| Part Model | Pin/Package Drawing | Documentation | CAD Symbols, Footprints, and 3D Models |
|---|---|---|---|
| HMC8418 | CHIPS OR DIE |
Latest Discussions
No discussions on adh659s yet. Have something to say?
Start a Discussion on EngineerZone®